TC74VHC08FT(EK2,M) Toshiba

TC74VHC08F/FN/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC08F,TC74VHC08FN,TC74VHC08FT,TC74VHC08FK Quad 2-Input AND Gate Note: xxxFN (JEDEC SOP) is not available in Japan. The TC74VHC08 is an advanced high speed CMOS 2-INPUT 2 TC74VHC08F AND GATE fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents TC74VHC08FN device destruction due to mismatched supply and input voltages. Features High speed: t = 4.3 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 2 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Power down protection is provided on all inputs. Balanced propagation delays: t t pLH pHL TC74VHC08FT Wide operating voltage range: V = 2 V to 5.5 V CC (opr) Low noise: V = 0.8 V (max) OLP Pin and function compatible with 74ALS08 TC74VHC08FK Weight SOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27 : 0.12 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) VSSOP14-P-0030-0.50 : 0.02 g (typ.) 1 2007-10-01 TC74VHC08F/FN/FT/FK Pin Assignment IEC Logic Symbol (1) 1A & (3) 1Y 1A 1 14 V (2) CC 1B (4) 2A (6) 1B 2 13 4B 2Y (5) 2B (9) 1Y 12 4A 3A 3 (8) 3Y (10) 3B 2A 4 11 4Y (12) 4A (11) 4Y (13) 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y (top view) Truth Table A B Y L L L L H L H L L H H H Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-10-01