TC7SH86F CMOS Digital Integrated Circuits Silicon Monolithic TC7SH86FTC7SH86FTC7SH86FTC7SH86F 1. 1. Functional DescriptionFunctional Description 1. 1. Functional DescriptionFunctional Description 2-Input Exclusive-OR Gate 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: T = -40 to 125 (Note 2) opr (3) High speed operation: t = 4.8 ns (typ.) (V = 5.0 V, C = 15 pF) pd CC L (4) Low power dissipation: I = 2.0 A (max) (T = 25 ) CC a (5) High noise immunity: V = V = 28 % V (min) NIH NIL CC (6) 5.5 V tolerant inputs (7) Balanced Propagation Delay: t t PLH PHL (8) Wide operating voltage range: V = 2.0 to 5.5 V CC Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. Note 2: For devices with the ordering part number ending in J(CT. T = -40 to 85 for the other devices. opr 3. 3. PackagingPackaging 3. 3. PackagingPackaging SMV Start of commercial production 1994-06 2017 2017-12-21 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TC7SH86F 4. 4. 4. 4. Marking and Pin AssignmentMarking and Pin AssignmentMarking and Pin AssignmentMarking and Pin Assignment MarkingMarking Pin Assignment (Top view)Pin Assignment (Top view) MarkingMarking Pin Assignment (Top view)Pin Assignment (Top view) 5. 5. 5. 5. IEC Logic SymbolIEC Logic SymbolIEC Logic SymbolIEC Logic Symbol 6. 6. 6. 6. Truth TableTruth TableTruth TableTruth Table A B Y L L L L H H H L H H H L 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Supply voltage V -0.5 to 7.0 V CC Input voltage V -0.5 to 7.0 IN DC output voltage V -0.5 to V + 0.5 OUT CC Input diode current I -20 mA IK Output diode current I (Note 1) 20 OK DC output current I 25 OUT V /ground current I 50 CC CC Power dissipation P 200 mW D Storage temperature T -65 to 150 stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: V < GND, V > V OUT OUT CC 2017 2017-12-21 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0