TCR3UM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3UM series Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Drop-Out Regulator in ultra small package The TCR3UM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of driving up to 300 mA. They feature Over-current protection, Thermal Shutdown function and Auto-discharge. The TCR3UM series is offered in the ultra small plastic mold package DFN4 (1.0 mm x 1.0 mm t 0.60 mm (max)) and has a low dropout voltage of 196 mV (3.3 V output, IOUT = 300 mA). As small ceramic input and output BOTTOM VIEW ILLUSTRATION capacitors 1 F can be used with the TCR3UM series, these devices are DFN4 ideal for portable applications that require high-density board assembly such Weight: 1.3 mg (typ.) as cellular phones, IoT equipment and wearable devices. Applications Power IC developed for portable applications, IoT equipment and wearable devices Features Ultra small package DFN4 (1.0 mm x 1.0 mm t 0.60 mm (max)). Low quiescent bias current ( IB = 0.34 A (typ.) at IOUT = 0 mA, output voltage up to 1.5 V) High Ripple rejection ratio 70 dB at 0.8 V-output Fast Load transient response -51/+36 mV at 0.8 V-output, IOUT = 1 mA 50 mA Low Drop-Out voltage VIN-VOUT = 196 mV (typ.) at 3.3 V-output, IOUT = 300 mA Wide range output voltage line up (VOUT = 0.8 to 5.0 V) High VOUT accuracy 1.0 % (1.8 V VOUT) Overcurrent protection Thermal Shutdown function Auto-discharge Inrush current protection circuit Pull down connection between CONTROL and GND Ceramic capacitors can be used (CIN = 1 F, COUT = 1 F) Start of commercial production 2018-08 2018-2021 1 2021-03-25 Toshiba Electronic Devices & Storage Corporation TCR3UM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to V + 0.3 6.0 V CT IN Output voltage VOUT -0.3 to VIN + 0.3 6.0 V Power dissipation P 420 (Note1) mW D Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole : diameter 0.5 mm x 24 Operating Ranges Characteristics Symbol Rating Unit Input voltage V 1.5 to 5.5 (Note 2) V IN Control voltage V 0 to V V CT IN Output voltage V 0.8 to 5.0 V OUT Output current I DC 300 (Note 3) mA OUT Operation Temperature T -40 to 85 C opr Output Capacitance C 1.0 F OUT Input Capacitance C 1.0 F IN Note 2: IOUT = 1 mA. Please refer to Dropout Voltage (Page 13) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. 2018-2021 2 2021-03-25 Toshiba Electronic Devices & Storage Corporation
