TCR8BM12,L3F Toshiba

TCR8BM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR8BM series 800 mA CMOS Ultra Low Dropout Regulator The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that allows ultra low dropout of 170 mV (Typ.) at I = 800 mA ( 1.1 OUT V output, V = 3.3 V ). BIAS These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 800 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR8BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm t 0.38 mm). As small ceramic input and output capacitors can be used with the DFN5B TCR8BM series, these devices are ideal for portable applications that require Weight : 1.4 mg ( Typ.) high-density board assembly such as cellular phones. Features Low dropout voltage V = 170 mV (Typ.) at 1.1 V output, V = 3.3 V , I = 800 mA DO BIAS OUT Low stand-by current ( I = 1 A (Max)) BIAS(OFF) Low quiescent bias current ( I = 20 A (Typ.) at V = 5.5 V, I = 0 mA ) BIAS(ON) BIAS OUT Wide range output voltage line up ( V = 0.8 to 3.6 V ) OUT Overcurrent protection Thermal shutdown Inrush current reduction Under voltage lockout (TCR8BMxxA products) Auto-discharge Pull down connection between CONTROL and GND Ultra small package DFN5B (1.2 mm x 1.2 mm t 0.38 mm ) Start of commercial production 2018-08 2018-2019 2019-01-15 1 Toshiba Electronic Devices & Storage Corporation TCR8BM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Bias voltage V -0.3 to 6.0 V BIAS Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 6.0 V OUT IN Power dissipation P 600 (Note 1) mW D Junction temperature T -40 to 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board dimension : 40 mm x 40 mm (4layer)t = 1.8 mm Metal pattern ratio : approximately 70% each layer) Operating Ranges Characteristics Symbol Rating Unit Bias voltage V (V + 1.4 2.5) to 5.5 V BIAS OUT Input voltage V V + V to V V IN OUT DO BIAS Control voltage V 0 to V V CT BIAS Output voltage V 0.8 to 3.6 V OUT Output current I 0 to 0.8 (Note 2) A OUT Operation Temperature T 40 to 85 C opr COUT C 2.2 F OUT CIN C 1.0 F IN CBIAS C 0.1 F BIAS Note 2: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum operating ranges output current specification defined as lifetime average junction temperature of +45C where max rated DC current = lifetime average current to avoid electro migration. 2018-2019 2019-01-15 2 Toshiba Electronic Devices & Storage Corporation