X-On Electronics has gained recognition as a prominent supplier of TK25E06K3,S1X(S MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK25E06K3,S1X(S MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK25E06K3,S1X(S Toshiba

TK25E06K3,S1X(S electronic component of Toshiba
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Part No.TK25E06K3,S1X(S
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET N-Ch 60V 25A Rdson 0.046 Ohm
Datasheet: TK25E06K3,S1X(S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.6665
10 : USD 1.2325
100 : USD 0.9321
500 : USD 0.793
1000 : USD 0.6263
2500 : USD 0.585
5000 : USD 0.5587
10000 : USD 0.54
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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TK25E06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK25E06K3TK25E06K3TK25E06K3TK25E06K3 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 14 m (typ.) DS(ON) (2) High forward transfer admittance: Y = 50 S (typ.) fs (3) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (4) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Drain-gate voltage (R = 20 k) V 60 GS DGR Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 25 A D Drain current (pulsed) (Note 1) I 75 DP Power dissipation (T = 25) P 60 W c D Single-pulse avalanche energy (Note 2) E 54 mJ AS Avalanche current I 25 A AR Repetitive avalanche energy (Note 3) E 6 mJ AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2012-04-24 1 Rev.1.0TK25E06K3 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.08 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 25 V, T = 25 (initial), L = 0.11 mH, R = 25 , I = 25 A DD ch G AR Note 3: Repetitive rating pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2012-04-24 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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