X-On Electronics has gained recognition as a prominent supplier of TK65A10N1,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK65A10N1,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK65A10N1,S4X Toshiba

TK65A10N1,S4X electronic component of Toshiba
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Part No.TK65A10N1,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: X35 PB-F POWER MOSFET TRANSIST
Datasheet: TK65A10N1,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 1.546 ea
Line Total: USD 7.73 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 1
50 : USD 3.4687
100 : USD 3.439
250 : USD 3.4089
500 : USD 3.3791
1000 : USD 3.3489
2500 : USD 3.3187
3000 : USD 3.2884
5000 : USD 3.2581
10000 : USD 3.2277

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9914
10 : USD 2.9453
25 : USD 2.9337
50 : USD 1.6286
100 : USD 1.5246
250 : USD 1.5131
500 : USD 1.3629
1000 : USD 1.2936

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 5
5 : USD 1.546
10 : USD 1.2638
100 : USD 1.2544
500 : USD 1.2293

   
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We are delighted to provide the TK65A10N1,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK65A10N1,S4X and other electronic components in the MOSFETs category and beyond.

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TK65A10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65A10N1TK65A10N1TK65A10N1TK65A10N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 4.0 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1,2) I 148 A D Drain current (DC) (T = 25) (Note 1) I 65 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 296 DP Power dissipation (T = 25) P 45 W c D Single-pulse avalanche energy (Note 3) E 143 mJ AS Avalanche current I 65 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-09 2014-02-13 1 Rev.4.0TK65A10N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.77 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: V = 80 V, T = 25 (initial), L = 26.1 H, I = 65 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-13 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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