TLP176G TOSHIBA Photocoupler GaAs Ired & PhotoMOS FET TLP176G Modems In PC Modem Fax Cards Unit in mm Telecommunications The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require space savings. Peak offstate voltage: 350 V (min) Trigger LED current: 3 mA (max) On state resistance: 35 (max) Isolation voltage: 1500 Vrms (min) UL recognized: UL1577, file No. E67349 BSI approved : BS EN60065: 2002, certificate No.8753 BS EN60950-1: 2002, certificate No.8754 JEDEC SEMKO approved: SS EN60065 SS EN60950 JEITA Option(V4) type TOSHIBA TUV approved: DIN EN 60747-5-2 Weight: 0.1 g (typ.) Certificate No.40009351 Pin Configuration (top view) Schematic 1-Form-A 1 4 4 1 4 3 3 2 1 2 2 3 1. : Anode 2. : Cathode 3. : Drain 4. : Drain Start of commercial production 1997/10 1 2014-09-22 TLP176G Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I / C 0.5 mA / C F Pulse forward current (100 s pulse,100pps) I 1 A FP Reverse voltage V 5 V R Junction temperature T 125 C j Offstate output terminal voltage V 350 V OFF Onstate current I 120 mA ON Onstate current derating (Ta 25C) l / C 1.2 mA / C ON Junction temperature T 125 C j Total power dissipation PT 350 mW Total power dissipation derating(Ta 25C) PT / C 0.35 mW / C Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature(10 s) T 260 C sol Isolation voltage (AC,1 minute, R.H. 60%)(Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Device considered a twoterminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together. Recommended Operating Conditions Characteristic Symbol MinTyp.MaxUnit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F Onstate current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2014-09-22 Detector LED