TLP176G TOSHIBA Photocoupler IRED & Photo-MOS FET TLP176G Modem-Fax Cards PBX Unit mm STB Measurement Equipment The TOSHIBA TLP176G consists of an infrared emitting diode optically coupled to a photo-MOS FET in a SOP, which is suitable for surface mount assembly. Because of the high-voltage MOSFET used to output terminals, TLP176G is suitable for a hook relay of a modem, a facsimile, and dial pulls relay. 4-pin SOP(2.54SOP4) Peak off-state voltage: 350 V (min) On-state current:120 mA (max) Trigger LED current: 3 mA (max) On-state resistance: 35 (max) Isolation voltage: 1500 Vrms (min) UL-recognized: UL 1577, File No.E67349 JEDEC cUL-recognized: CSA Component Acceptance Service No.5A JEITA File No.E67349 TOSHIBA 11-5H1 VDE-approved: EN 60747-5-5 (Note 1) Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration Schematic (top view) 1-Form-A 1 4 1 4 4 3 2 3 1 2 2 3 1. : Anode 2. : Cathode 3. : Drain 4. : Drain Start of commercial production 1997-10 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP176G Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I / C -0.5 mA / C F Pulse forward current (100s pulse,100pps) I 1 A FP Reverse voltage V 5 V R P 50 mW Diode power dissipation D Diode power dissipation derating (Ta 25C) P /C -0.5 mW/C D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF On-state current I 120 mA ON On-state current derating (Ta 25C) l / C -1.2 mA / C ON Output power dissipation P 300 mW O Output power dissipation derating (Ta 25C) P / C -3.0 mW / C O Junction temperature T 125 C j Total power dissipation PT 350 mW Total power dissipation derating(Ta 25C) PT / C -3.5 mW / C Storage temperature range T -55 to 125 C stg Operating temperature range T -40 to 85 C opr Lead soldering temperature(10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F On-state current I 100 mA ON Operating temperature T -20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED