TLP185(SE
Photocouplers GaAs Infrared LED & Photo Transistor
TLP185(SETLP185(SETLP185(SETLP185(SE
1. 1. ApplicationsApplications
1. 1. ApplicationsApplications
Office Equipment
Programmable Logic Controllers (PLCs)
AC Adapters
I/O Interface Boards
2. 2. 2. 2. GeneralGeneralGeneralGeneral
The TLP185(SE consist of a photo transistor optically coupled to gallium arsenide infrared emitting diode.
The TLP185(SE photocoupler is housed in the very small and thin SO6 package.
Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such
as programmable controllers.
3. 3. FeaturesFeatures
3. 3. FeaturesFeatures
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50% (min)
Rank GB: 100% (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
(Note 1)
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1)
(Note 1)
: EN62368-1 (Pending) (Note 1)(Note 1)(Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4).
4. Packaging and Pin Assignment
4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment
1: Anode
3: Cathode
4: Emitter
6: Collector
11-4M1S
Start of commercial production
2013-01
2015-2018
2018-01-05
1
Toshiba Electronic Devices & Storage Corporation
Rev.6.0TLP185(SE
5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation
5.1. 5.1. Mechanical ParametersMechanical Parameters
5.1. 5.1. Mechanical ParametersMechanical Parameters
Characteristics Min Unit
Creepage distances 5.0 mm
Clearance 5.0
Internal isolation thickness 0.4
6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 ))))
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Characteristics Symbol Note Rating Unit
LED Input forward current I 50 mA
F
Input forward current derating (T 90 ) I /T -1.5 mA/
a F a
Input forward current (pulsed) I (Note 1) 1 A
FP
Input reverse voltage V 5 V
R
Input power dissipation P 100 mW
D
Input power dissipation (T 90 ) P /T -2.86 mW/
a D a
derating
Junction temperature T 125
j
Detector Collector-emitter voltage V 80 V
CEO
Emitter-collector voltage V 7 V
ECO
Collector current I 50 mA
C
Collector power dissipation P 150 mW
C
Collector power dissipation (T 25 ) P /T -1.5 mW/
a C a
derating
Junction temperature T 125
j
Common Operating temperature T -55 to 110
opr
Storage temperature T -55 to 125
stg
Lead soldering temperature (10 s) T 260
sol
Total power dissipation P 200 mW
T
Isolation voltage AC, 60 s, R.H. 60% BV (Note 2) 3750 Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) 100 s, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
2015-2018
2018-01-05
2
Toshiba Electronic Devices & Storage Corporation
Rev.6.0