TLP2301 Photocouplers GaAAs Infrared LED & Photo IC TLP2301TLP2301TLP2301TLP2301 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Industrial Inverters Communications Equipment Home Electric Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2301 consists of a high-speed detector based on the photo-transistor optically coupled to GaAAs infrared emitting diodes. It is housed in the SO6 package. The TLP2301 has realized the early switching characteristics by several k resistance. The TLP2301 correspond to the transmission rate of 20 kbps, and has become a product which fills between a general-purpose transistor coupler and IC couplers corresponding to 1 Mbps. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 40 V (min) (2) Current transfer ratio: 50% (min) ( I = 1 mA, V = 5 V) F CE Rank GB: 100% (min) ( I = 1 mA, V = 5 V) F CE (3) Isolation voltage: 3750 Vrms (min) (4) Propagation delay time: t = 30 s (max), t = 30 s (max) I = 1 mA, R = 10 k, T = 25 pHL pLH F L a (5) Operating temperature: -55 to 125 (6) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production 2013-03 2016 Toshiba Corporation 2016-01-13 1 Rev.3.0TLP2301 5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 5.1. 5.1. Mechanical ParametersMechanical Parameters 5.1. 5.1. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.11 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Input power dissipation P 100 mW D Junction temperature T 135 j Detector Collector-emitter voltage V 40 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.35 mW/ a C a derating (1 circuit) Junction temperature T 135 j Common Operating temperature T -55 to 125 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Input power dissipation (T 25 ) P /T -1.82 mW/ a D a derating Isolation voltage AC, 60 s, R.H. 60% BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2016 Toshiba Corporation 2016-01-13 2 Rev.3.0