TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers Unit: mm AC/DC-Input Module Hybrid ICs TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly by AC input current Since TLP290 are guaranteed wide operating temperature (Ta=-55 to 110 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. Collector-Emitter voltage : 80 V (min) Current transfer ratio : 50% (min) Rank GB : 100% (min) Isolation voltage : 3750 Vrms (min) TOSHIBA 11-3C1 Guaranteed performance over -55 to 110 C Weight: 0.05 g (typ.) UL recognized : UL1577, File No. E67349 Pin Configuration cUL approved : CSA Component Acceptance Service No.5A, File No. 67349 TLP290 SEMKO approved : EN 60065: 2002, Approved no. 1200315 1 4 EN 60950-1: 2001, EN 60335-1: 2002, Approved no. 1200315 2 3 BSI approved : BS EN 60065: 2002, Approved no. 9036 : BS EN 60950-1: 2006, Approved no. 9037 1: Anode Option (V4) Cathode VDE approved: EN 60747-5-5 Certificate, No. 40009347 2: Cathode Maximum operating insulation voltage: 707 Vpk Anode Highest permissible over-voltage: 6000 Vpk 3: Emitter (Note) When an EN 60747-5-5 approved type is needed, 4: Collector please designate the Option(V4) Construction Mechanical Rating Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insultion thickness: 0.4 mm (min) 1 2012-04-26 TLP290 Current Transfer Ratio (Unless otherwise specified, Ta = 25C) Current Transfer Ration (%) (I / I ) C F Classification TYPE Marking of Classification (Note1) I = 5 mA, V = 5 V, Ta = 25C F CE Min Max Blank 50 400 Blank, YE, GR, B, GB Rank Y 50 150 YE TLP290 Rank GR 100 300 GR Rank BLL 200 400 B Rank GB 100 400 GB Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP290(GB,E Note: For safety standard certification, however, specify the part number alone. (e.g.) TLP290(GB,E: TLP290 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25C) Note Rating Characteristic Symbol Unit R.M.S. forward current I 50 mA F(RMS) Input forward current derating (Ta 90C) I / Ta -1.5 mA /C F Input forward current (pulsed) I (Note 2) 1 A FP Input power dissipation P 100 mW D Input power dissipation derating (Ta 90C) P /Ta -3.0 mW/C D Junction temperature T 125 C j Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation derating (Ta 25C) P / Ta -1.5 mW /C C Junction temperature T 125 C j Operating temperature range T -55 to 110 C opr Storage temperature range T -55 to 125 C stg Lead soldering temperature T 260 (10s) C sol Total package power dissipation P 200 mW T Total package power dissipation derating (Ta 25C) P / Ta -2.0 mW /C T Isolation voltage BV (Note3) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width 100s, frequency 100Hz Note3: AC, 1min., R.H. 60%, Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. 2 2012-04-26 Detector LED