TENTATIVE TLP291-4 TLP291-4 Technical Information This material is technological examination material to aim at the product introduction. The change in the content of the characteristic might be accompanied at the final specification process. The final specification will be able to be gotten in the brokerage department when the product is designed and to get the confirmation. 2011/03/15 Toshiba Corporation Semiconductor Company Optoelectronics Device Marketing & Engineering Group 1 (HOC-1267) 2011-03-151 TENTATIVE TLP291-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291-4 Programmable Controllers Power Supplies Hybrid ICs Unit in mm The Toshiba TLP291-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16 package, very small and thin coupler. Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110 C), its suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. z Collector-Emitter Voltage : 80 V (min) z Current Transfer Ratio : 50% (min) Rank GB : 100% (min) z Isolation Voltage : 2500 Vrms (min) z Guaranteed performance over -55 to 110 C z UL (under preparation) : UL1577 , File No. E67349 cUL (under preparation) : CSA Component Acceptance Service TOSHIBA No.5A Weight: 0.19 g (typ.) z BSI (under prerapation) : BS EN 60065: 2002, : BS EN 60950-1: 2006 Pin Configuration Construction Mechanical Rating TLP291-4 1 16 Creepage Distance 5.0 mm (min) Clearance 5.0 mm (min) 2 15 3 14 13 4 12 5 11 6 7 10 8 9 1,3,5,7 :ANODE 2,4,6,8 :CATHODE 9,11,13,15 :EMITTER 10,12,14,16 :COLLECTOR (HOC-1267) 2011-03-152