TLP291(SE Photocouplers Infrared LED & Photo Transistor TLP291(SETLP291(SETLP291(SETLP291(SE 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies Programmable Logic Controllers (PLCs) I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP291(SE consists of photo transistor optically coupled to an infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler. Since TLP291(SE is guaranteed wide operating temperature (T = -55 to a 110 ) and high isolation voltage (3750 Vrms), it s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. Packaging and Pin Assignment 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Emitter 4: Collector 11-3C1 Start of commercial production 2012-02 2016-2019 2019-07-08 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP291(SE 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.5 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Input power dissipation P 100 mW D Input power dissipation derating (T 90 ) P /T -3.0 mW/ a D a Junction temperature T 125 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Total power dissipation derating (T 25 ) P /T -2.0 mW/ a T a Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 7. 7. 7. 7. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage V I = 10 mA 1.1 1.25 1.4 V F F Input reverse current I V = 5 V 5 A R R Input capacitance C V = 0 V, f = 1 MHz 30 pF t Detector Collector-emitter breakdown V I = 0.5 mA 80 V (BR)CEO C voltage Emitter-collector breakdown V I = 0.1 mA 7 V (BR)ECO E voltage Dark Current I V = 48 V 0.001 0.08 A DARK CE V = 48 V, T = 85 2 50 CE a Collector-emitter capacitance C V = 0 V, f = 1 MHz 10 pF CE 2016-2019 2019-07-08 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0