TLP293 Photocouplers InGaAs Infrared LED & Photo Transistor TLP293TLP293TLP293TLP293 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies Programmable Logic Controllers (PLCs) I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP293 is a low input and high isolation type photocoupler that consists of a phototransistor optically coupled to a InGaAs infrared emitting diode in a SO4 package. Since TLP293 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature range (T = -55 a to 125 ), it is suitable for high density surface mounting applications such as programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) ( I = 0.5 mA, V = 5 V) F CE GB Rank: 100 % (min) ( I = 0.5 mA, V = 5 V) F CE (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature range: -55 to 125 (5) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) (Note 1) : EN62368-1 (Pending) (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. Packaging and Pin Assignment 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Emitter 4: Collector 11-3C1 Start of commercial production 2013-09 2016-07-06 1 Rev.3.0TLP293 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.5 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Junction temperature T 125 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 125 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Total power dissipation (T 25 ) P /T -2.0 mW/ a T a derating Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 7. 7. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 7. 7. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage V I = 10 mA 1.1 1.25 1.4 V F F Input reverse current I V = 5 V 5 A R R Input capacitance C V = 0 V, f = 1 MHz 30 pF t Detector Collector-emitter breakdown V I = 0.5 mA 80 V (BR)CEO C voltage Emitter-collector breakdown V I = 0.1 mA 7 V (BR)ECO E voltage Dark Current I V = 48 V 0.01 0.08 A DARK CE V = 48 V, T = 85 2 50 CE a Collector-emitter capacitance C V = 0 V, f = 1 MHz 10 pF CE 2016-07-06 2 Rev.3.0