TLP3051(S), TLP3052(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3051(S),TLP3052(S)
OFFICE MACHINE
Unit in mm
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3051(S) and TLP3052(S) consists of a photo-triac
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP package.
Peak Off-State Voltage : 600V(Min)
Trigger LED Current : 15mA(Max) (TLP3051(S))
10mA(Max) (TLP3052(S))
On-State Current : 100mA(Max)
JEDEC
Isolation Voltage : 5000Vrms(Min)
TOSHIBA 11-7A9
UL Recognized : UL1577,File No.E67349
Weight: 0.39 g (typ.)
SEMKO Approved : SS EN60065
SS EN60950, File No.9841111
BSI Approved : BS EN60065, File No.8385
Pin Configuration
BS EN60950, File No.8386
(top view)
Option (D4) type
1 6
VDE approved: DIN EN60747-5-2
Approved No. 40009302
2
Maximum operating insulation voltage: 890VPK
4
Highest permissible over voltage: 8000VPK 3
1: Anode
(Note):When a EN60747-5-2 approved type is needed,
2: Csthode
please designate theOption (D4
3: N.C.
4:Terminal 1
Construction Mechanical Rating
6:Terminal 2
7.62 mm pich 10.16 mm pich
Standard Type TLPxxxxF Type
Creepage Distance 7.0 mm (Min) 8.0 mm (Min)
Clearance 7.0 mm (Min) 8.0 mm (Min)
Insulation Thickness 0.5 mm (Min) 0.5 mm (Min)
1 2007-10-01
TLP3051(S), TLP3052(S)
Absolute Maximum Ratings (Ta=25C)
CHARACTERISTIC SYMBOLRATING UNIT
Forward Current I 50 mA
F
Forward Current Derating (Ta 53C) I /C 0.7 mA /C
F
Peak Forward Current (100 s pulse, 100pps) I 1 A
FP
Power Dissipation P 100 mW
D
Power Dissipation Derating (Ta 25C) P /C -1.0 mW/C
D
Reverse Voltage V 5 V
R
Junction Temperature Tj 125 C
Off-State Output Terminal Voltage V 600 V
DRM
Ta=25C 100
On-State RMS Current I mA
T(RMS)
Ta=70C 50
On-State Current Derating (Ta 25C) I/C -1.1 mA /C
T
Peak On-State Current (100s pulse, 120pps) I 2 A
TP
Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%) I 1.2 A
TSM
mW
Power Dissipation P 300
D
Power Dissipation Derating (Ta 25C) P /C -4.0 mW/C
D
Junction Temperature T 115 C
j
Storage Temperature Range T 55~150 C
stg
Operating Temperature Range T 40~100 C
opr
Lead Soldering Temperature (10s) T 260 C
sol
Total Package Power Dissipation P 330 mW
T
mW /C
Total Package Power Dissipation Derating (Ta 25C) P/C -4.4
T
Isolation Voltage (AC,1min. , R.H. 60%) (Note 2) BV 5000 Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device :Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN.TYP.MAX.UNIT
Supply Voltage V 240 V
AC ac
*
Forward Current I 15 20 25 mA
F
Peak On-State Current I 1 A
TP
Operating Temperature T 25 85 C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*In The case of TLP3052
2 2007-10-01
DETECTOR LED