TLP3475S Photocouplers Photorelay TLP3475STLP3475STLP3475STLP3475S 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Measuring Instruments High-Speed Memory Testers High-Speed Logic IC Testers ATE (Automatic Test Equipment) Probe Cards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP3475S photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a S- VSON4 package. The TLP3475S features a low CR product and extremely low on-state resistance,and thus delivers high on-state current. Additionally, the TLP3475S offers low insertion loss of a high-frequency signal and thus prevents the degradation of a rapidly rising signal. The TLP3475S also features low off-state current and low output pin capacitance, making it suitable for high-frequency measuring instrument applications. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) S-VSON4: height = 1.75 mm (max), area = 1.45 mm 2.0 mm (typ.) (2) Normally opened (1-Form-A) (3) OFF-state output terminal voltage: 60 V (min) (4) Trigger LED current: 3 mA (max) (5) ON-state current: 0.4 A (max) (6) ON-state resistance: 1.5 (max) (7) Output capacitance: 12 pF (typ.), 20 pF (max) (8) Isolation voltage: 500 Vrms (min) (9) Halogen-free For details, seeDevices in Halogen-Free Resin Package at the end of this datasheet. 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Drain 4: Drain 11-2E1A Start of commercial production 2017-03 2017-2020 2020-02-25 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TLP3475S 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 30 mA F Input forward current derating (T 25 ) I /T -0.3 mA/ a F a Input reverse voltage V 6 V R Input power dissipation P 50 mW D Input power dissipation derating (T 25 ) P /T -0.5 mW/ a D a Junction temperature T 125 j Detector OFF-state output terminal voltage V 60 V OFF ON-state current I 0.4 A ON ON-state current derating (T 25 ) I /T -4 mA/ a ON a ON-state current (pulsed) (t = 100 ms, Duty = 1/10) I 1.2 A ONP Output power dissipation P 240 mW O Output power dissipation derating (T 25 ) P /T -2.4 mW/ a O a Junction temperature T 125 j Common Storage temperature T -40 to 125 stg Operating temperature T -40 to 110 opr Lead soldering temperature (10 s) T 260 sol Isolation voltage AC, 60 s, R.H. 60 % BV (Note 1) 500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on. 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage V 48 V DD Input forward current I 5 7.5 20 mA F ON-state current I 0.4 A ON Operating temperature T -20 100 opr Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 2017-2020 2020-02-25 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0