TLP385(GR-TPL,E Toshiba

TLP385 Photocouplers Infrared LED & Photo Transistor TLP385TLP385TLP385TLP385 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) AC Adapters I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP385 is a photocoupler of high isolation type that consists of phototransistor optically coupled to an infrared LED in a 4-pin SO6L package. TLP385 is guaranteed high isolation voltage (5000 Vrms). Since TLP385 has a small and thin package compared with a standard DIP package, is it is suitable for high- density surface mounting applications such as programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature: -55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4P1A Start of commercial production 2014-08 2016-2019 2019-12-19 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TLP385 5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 5.1. 5.1. Mechanical ParametersMechanical Parameters 5.1. 5.1. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 8.0 mm Clearance 8.0 Internal isolation thickness 0.4 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.43 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.86 mW/ a D a derating Input reverse voltage V 5 V R Junction temperature T 125 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Total power dissipation (T 25 ) P /T -2.0 mW/ a T a derating Isolation voltage (AC, 60 s, R.H. 60 %) BV (Note 2) 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2016-2019 2019-12-19 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0