Product Information

TLP570(F)

TLP570(F) electronic component of Toshiba

Datasheet
Optocoupler DC-IN 1-CH Darlington DC-OUT 6-Pin PDIP

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 2.7989 ea
Line Total: USD 55.98

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 20
Multiples : 20

Stock Image

TLP570(F)
Toshiba

20 : USD 2.7989
25 : USD 2.0862
100 : USD 1.6951
500 : USD 1.5611

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Package / Case
If - Forward Current
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Pd - Power Dissipation
Mounting Style
Input Type
Brand
Collector Current Dc Max
Collector-Emitter Voltage
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Forward Voltage
Reverse Breakdown Voltage
Output Device
Rad Hardened
Collector Current Dc
LoadingGif

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TLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo-Transistor TLP570, TLP571 Programmable Controllers Unit: mm AC / DC-Input Module Solid State Relay The TOSHIBA TLP570 and TLP571 consist of a Darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP570 has no-base internal connection for high-EMI environments. Collector-emitter voltage: 35 V (min) Current transfer ratio: 1000 % (min) Isolation voltage: 2500 Vrms (min) UL recognized: UL1577, file no. E67349 c-UL approved: CSA Component Acceptance Service No. 5A, File No.E67349 TOSHIBA 11-7A8 Pin Configurations (top view) Weight: 0.4 g (typ.) Start of commercial production 1982-02 1 2017-05-16 TLP570,TLP571 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 70 mA F Forward current derating (Ta 25C) I / C -0.7 mA / C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R Diode power dissipation P 100 mW D Diode power dissipation derating (Ta >25C) P /C -1.0 mW/C D Junction temperature T 125 C j Collector-emitter voltage V 35 V CEO Collector-base voltage (TLP571) V 80 V CBO Emitter-collector voltage V 7 V ECO Emitter-base voltage (TLP571) V 7 V EBO Collector current I 150 mA C Power dissipation P 150 mW C Power dissipation derating (Ta 25C) P / C -1.5 mW / C C Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Operating temperature range T -55 to 100 C opr Lead soldering temperature (10s) T 260 C sol Total package power dissipation P 250 mW T Total package power dissipation derating (Ta 25C) P / C -2.5 mW / C T Isolation voltage (AC, 60 s, R.H. 60%) (Note 1) BV 2500 S V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommends Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 5 24 V CC Forward current I 16 25 mA F Collector current I 50 mA C Operating temperature T -25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2017-05-16 Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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