TLP620,TLP6202,TLP6204
TOSHIBA Photocoupler GaAs Ired & Photo Transistor
TLP620, TLP620 2, TLP620 4
Programmable Controllers
Unit in mm
AC / DCInput Module
Telecommunication
The TOSHIBA TLP620, 2 and 4 consists of a photo transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620 2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620 4 provides four isolated channels in a sixteen plastic
DIP.
TOSHIBA 11 5B2
Collectoremitter voltage: 55V (min.)
Weight: 0.26 g
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations
(top view)
TLP620
TLP620-2 TLP620-4
4
1 16
1 8 1
2
3 2 2
7 15
1 : ANODE
14
3 6 3
CATHODE
2 : CATHODE
TOSHIBA 11 10C4
ANODE
3 : EMITTER 4 4 Weight: 0.54 g
5 13
4 : COLLECTOR
1, 3 : ANODE
5
12
CATHODE
2, 4 : CATHODE
ANODE
11
6
5, 7 : EMITTER
6, 8 : COLLECTOR
7 10
8 9
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA 11 20A3
Weight: 1. 1 g
1 2002-09-25 TLP620,TLP6202,TLP6204
Made In Japan Made In Thailand
UL recognized E67349 *1 E 152349 *1
BSI approved 7426, 7427 *2 7426, 7427 *2
*1 UL 1577
*2 BS EN60065: 1994, BS EN60950: 1992
Isolation voltage: 5000V (min.)
rms
Option (D4) type
VDE approved: DIN VDE0884 / 06.92, certificate no. 68384
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the Option(D4).
Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Maximum Ratings (Ta = 25C)
Rating
Characteristic Symbol Unit
TLP6202
TLP620
TLP6204
Forward current I 60 50 mA
F (RMS)
Forward current derating I / C 0.7 (Ta 39C) 0.5 (Ta 25C) mA / C
F
Pulse forward current I 1 (100s pulse, 100pps) A
FP
Power dissipation (1 circuit) P 100 70 mW
D
Power dissipation derating P / C 1.0 0.7 mW / C
D
Junction temperature T 125 C
j
Collectoremitter voltage V 55 V
CEO
Emittercollector voltage V 7 V
ECO
Collector current I 50 mA
C
Collector power dissipation
P 150 100 mW
C
(1 circuit)
Collector power dissipation
P / C 1.5 1.0 mW / C
C
derating (1 circuit) (Ta 25C)
Junction temperature T 125 C
j
Storage temperature range T 55~125 C
stg
Operating temperature range T 55~100 C
opr
Lead soldering temperature T 260 (10s) C
sold
Total package power dissipation P 250 150 mW
T
Total package power dissipation
P / C 2.5 1.5 mW / C
T
derating (Ta 25C, 1 circuit)
Isolation voltage BV 5000 (AC, 1 min., RH 60%)
V
S
rms
2 2002-09-25
Detector LED