TLP620,TLP620 2,TLP620 4 TOSHIBA Photocoupler GaAs Ired & PhotoTransistor TLP620, TLP6202, TLP6204 Programmable Controllers Unit in mm AC / DCInput Module Telecommunication The TOSHIBA TLP620, 2 and 4 consists of a phototransistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. The TLP6202 offers two isolated channels in an eight lead plastic DIP, while the TLP6204 provides four isolated channels in a sixteen plastic DIP. Collector emitter voltage: 55V (min.) TOSHIBA 115B2 Current transfer ratio: 50% (min.) Weight: 0.26 g (typ.) Rank GB: 100% (min.) Pin Configurations (top view) TLP620 TLP620-2 TLP620-4 1 4 8 1 16 1 2 3 2 2 7 15 1 : ANODE 3 3 14 6 CATHODE 2 : CATHODE TOSHIBA 1110C4 ANODE 3 : EMITTER 4 4 5 13 Weight: 0.54 g (typ.) 4 : COLLECTOR 1, 3 : ANODE 5 12 CATHODE 2, 4 : CATHODE ANODE 11 6 5, 7 : EMITTER 6, 8 : COLLECTOR 7 10 8 9 1, 3, 5, 7 : ANODE, CATHODE 2, 4, 6, 8 : CATHODE, ANODE 9, 11, 13, 15 : EMITTER 10, 12, 14, 16 : COLLECTOR TOSHIBA 1120A3 Weight: 1.1 g (typ.) 1 2014-09-22 TLP620,TLP620 2,TLP620 4 Made In Japan Made In Thailand UL recognized E67349 *1 E152349 *1 BSI approved 7426, 7427 *2 7426, 7427 *2 *1 UL1577 *2 BS EN60065: 2002, BS EN60950-1: 2002 Isolation voltage: 5000V (min.) rms Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no.40009302 Maximum operating insulation voltage: 890V PK Highest permissible over voltage: 8000V PK (Note) When an EN 60747-5-2 approved type is needed, please designate the Option(D4). Creepage distance: 6.4mm (min.) Clearance: 6.4mm (min.) Insulation thickness: 0.4mm (min.) Absolute Maximum Ratings (Ta = 25C) Rating Characteristic Symbol Unit TLP6202 TLP620 TLP6204 Forward current I 60 50 mA F (RMS) Forward current derating I / C 0.7 (Ta 39C) 0.5 (Ta 25C) mA / C F Pulse forward current I 1 (100s pulse, 100pps) A FP Power dissipation (1 circuit) P 100 70 mW D Power dissipation derating P / C 1.0 0.7 mW / C D Junction temperature T 125 C j Collectoremitter voltage V 55 V CEO Emittercollector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 100 mW C (1 circuit) Collector power dissipation P / C 1.5 1.0 mW / C C derating (1 circuit) (Ta 25C) Junction temperature T 125 C j Storage temperature range T 55~125 C stg Operating temperature range T 55~100 C opr Lead soldering temperature T 260 (10s) C sold Total package power dissipation P 250 150 mW T Total package power dissipation P / C 2.5 1.5 mW / C T derating (Ta 25C, 1 circuit) Isolation voltage BV 5000 (AC, 1 min., RH 60%) V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-09-22 Detector LED