TLP705(F) Toshiba

TLP705F TOSHIBA Photocoupler IRED + Photo IC TLP705F Plasma Display Panel Unit: mm Industrial Inverter 4.580.25 6 5 4 IGBT/Power MOS FET Gate Drive TLP705F consists of an infrared LED and an integrated photodetector. This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8pin DIP and has suited the safety standard reinforced insulation class. So mounting area in safety standard required equipment can be reduced. TLP705F is suitable for gate driving circuit of IGBT or power MOS FET. 1 2 3 Especially TLP705F is capable of direct gate drive of lower Power IGBTs. 7.620.25 Peak output current : 0.45 A (max) Operating frequency : 250kHz (max) 1.270.2 0.750.25 0.40.1 11.70.3 Guaranteed performance over temperature : -40 to 100C Supply current : 3.0mA (max) Power supply voltage : 10 to 20 V TOSHIBA 11-5J101S Threshold input current : IFLH = 8 mA (max) Weight: 0.26 g (typ.) Switching time (tpLH / tpHL) : 200 ns (max) Common mode transient immunity : 10 kV/s (min) Pin Configuration (Top View) Isolation voltage : 5000 Vrms (min) Construction Mechanical Rating 1: ANODE 1 6 2: NC Creepage Distance 8.0 mm (min) 3: CATHODE Clearance 8.0 mm (min) 2 5 Insulation Thickness 0.4 mm (min) 4: GND 5: V (OUTPUT) O UL-recognized : UL 1577, File No.E67349 6: V 4 CC 3 SHIELD cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5 , EN 62368-1 (Note 1) Schematic I CC 6 V CC Note 1: When a VDE approved type is needed, (Tr1) please designate the Option(D4). I F 1+ V I F O 5 Truth Table (Tr2) 3- V O Input LED Tr1 Tr2 Output 4 GND SHIELD H ON ON OFF H Note: A 0.1 F bypass capacitor must be OFF OFF ON L L connected between pins 6 and 4. Start of commercial production 2004-04 2019 1 2019-09-25 Toshiba Electronic Devices & Storage Corporation +0.15 3.65 0.25 6.80.25 +0.10 0.25 0.05 +0.25 3.9 0.15 TLP705F Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 85C) I / Ta -0.54 mA/C F Peak transient forward current (Note 1) I 1 A FP Reverse voltage V 5 V R Diode power dissipation P 40 mW D Diode power dissipation derating (Ta 85C) P /C -1.0 mW/C D Junction temperature T 125 C j H peak output current (Note 2) I -0.45 A OPH L peak output current (Note 2) I 0.45 A OPL Output voltage V 25 V O Supply voltage V 25 V CC Power dissipation P 400 mW C Power dissipation derating (Ta 25C) P / C -4.0 mW / C C Junction temperature T 125 C j Operating frequency (Note 3) f 250 kHz Storage temperature range T -55 to 125 C stg Operating temperature range T -40 to 100 C opr Lead soldering temperature (10 s) (Note 4) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note : A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: Pulse width P 1 s, 300 pps W Note 2: Exponential waveform pulse width P 2 s, f 15 kHz W Note 3: Exponential waveform IOPH -0.25 A (PW 80 ns), IOPL +0.25 A (PW 80 ns), Ta = 100 C Note 4: It is effective soldering area of Lead. Note 5: Device considered a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2019 2 2019-09-25 Toshiba Electronic Devices & Storage Corporation Detector LED