TLP719 TOSHIBA PHOTOCOUPLER IRED + PHOTOIC TLP719 Unit: mm Digital logic ground isolation 4.580.25 Line receivers 6 5 4 Microprocessor system interfaces Switching power supply feedback control Industrial invertors The TOSHIBA TLP719 consists of a high-output infrared emitting diode and a high- speed detector. 1 2 3 This unit is a 6-lead SDIP. The TLP719 is 50% smaller than the 8-pin DIP and 7.620.25 meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP719 has a Faraday shield integrated on the photodetector chip to provide an effective common mode noise transient immunity. Therefore this product is 1.270.2 1.250.25 suitable for application in noisy environmental conditions. 0.40.1 9.70.3 Open collector Package type : SDIP6 TOSHIBA 11-5J1S Isolation voltage : 5000 Vrms (min) Weight: 0.26 g (typ.) Common mode transient immunity : 10 kV/ s (min) V = 400 Vp-p CM Switching speed : tp / tp = 0.8 s (max) HL LH I = 16 mA, V = 5 V, F CC R = 1.9 k, Ta = 25 C L PIN CONFIGURATION (Top View) TTL compatible Construction mechanical rating 1 : ANODE 1 6 7.62-mm pitch 10.16-mm pitch 2 : N.C. standard type TLPXXXF type 3 : CATHODE 5 Creepage Distance 7.0 mm (min) 8.0 mm (min) 2 4 : EMITTER (GND) Clearance 7.0 mm (min) 8.0 mm (min) 5 : COLLECTOR (OUTPUT) Insulation Thickness 0.4 mm (min) 0.4 mm (min) 4 3 6 : V SHIELD CC UL-recognized : UL 1577, File No.E67349 cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5 , EN 62368-1 (Note1) Note 1: When a VDE approved type is needed, SCHEMATIC please designate the Option(D4). I F I CC 1 V CC 6 I O V V O F 5 3 GND 4 SHIELD A 0.1- F bypass capacitor must be connected between pins 4 and 6. Start of commercial production 2007-09 2019 1 2019-06-03 Toshiba Electronic Devices & Storage Corporation +0.15 3.65 6.80.25 0.25 +0.10 0.25 0.05 +0.25 4.0 0.20 TLP719 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Forward current I 25 mA F Forward current derating (Ta 70 C) IF/ Ta -0.45 mA / C Pulse forward current (Note 1) I 50 mA FP Peak transient forward current (Note 2) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation (Note 3) P 45 mW D Junction temperature Tj 125 C Output current I 8 mA O Peak output current I 16 mA OP Output voltage V 0.5 to 20 V O Supply voltage V 0.5 to 30 V CC Output power dissipation P 100 mW O Output power dissipation derating (Ta 70 C) Po / Ta 1.8 mW / C Junction Temperature T 125 C j Operating temperature range Topr 55 to 100 C Storage temperature range Tstg 55 to 125 C Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 4) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note : A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high- gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: 50 % duty cycle, 1 ms pulse width. Derate 0.9 mA / C above 70 C. Note 2: Pulse width 1 s, 300 pps. Note 3: Derate 0.8 mW / C above 70 C. Note 4: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. 2019 2 2019-06-03 Toshiba Electronic Devices & Storage Corporation Detector LED