TLP785,TLP785F
TOSHIBA Photocoupler GaAs IRED & PhotoTransistor
TLP785, TLP785F
TLP785 Unit: mm
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission between Different Voltage
Circuits
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5 kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
TLP785: 7.62 mm pitch type DIP4
TOSHIBA 11-5L1
TLP785F: 10.16 mm pitch type DIP4
Weight: 0.25 g (typ.)
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
TLP785F
Unit: mm
Rank GB: 100% (min)
Isolation voltage: 5000 Vrms (min)
UL approved : UL1577, File No.E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Option (D4) VDE approved : DIN EN60747-5-5(Note 1)
CQC-approved: GB4943.1, GB8898 China Factory
SEMKO approved: EN60065
EN60950-1, EN62368-1
Note 1 : When a EN60747-5-5 approved type is needed, please
designate Option(D4)
Construction mechanical rating
7.62 mm Pitch 10.16 mm Pitch
Standard Type TLPxxxF Type
TOSHIBA 11-5L102
Creepage distance 7.0 mm (min) 8.0 mm (min)
Weight: 0.25 g (typ.)
Clearance 7.0 mm (min) 8.0 mm (min)
Pin Configurations (top view)
Insulation thickness 0.4 mm (min) 0.4 mm (min)
Inner creepage distance 4.0 mm (min) 4.0 mm (min)
1
4
2
3
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Start of commercial production
2010-11
1 2017-04-28 TLP785,TLP785F
Current Transfer Ratio (Note)
Current Transfer Ratio (%)
(I / I )
Classification C F
Type Marking of Classification
(Note 1) I = 5mA, V = 5V, Ta = 25C
F CE
Min Max
None 50 600 Blank
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
TLP785 Rank GB 100 600 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
Rank BLL 200 400 B
Note 1: Ex. rank GB: TLP785 (GB)
Note: Application type name for certification test, please use standard product type name, i. e.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Note) (Ta = 25C)
Characteristic Symbol Rating Unit
Forward current I 60 mA
F
Forward current derating (Ta 39C) I / C 0.7 mA / C
F
Pulse forward current (Note 2) I 1 A
FP
Power dissipation P 90 mW
D
Power dissipation derating (Ta 39C) P / C 0.9 mW / C
D
Reverse voltage V 5 V
R
Junction temperature T 125 C
j
Collectoremitter voltage V 80 V
CEO
Emittercollector voltage V 7 V
ECO
Collector current I 50 mA
C
Power dissipation (single circuit) P 150 mW
C
Power dissipation derating
P / C 1.5 mW / C
C
(Ta 25C)
Junction temperature T 125 C
j
Operating temperature range T 55 to 110 C
opr
Storage temperature range T 55 to 125 C
stg
Lead soldering temperature (10 s) T 260 C
sol
Total package power dissipation P 240 mW
T
Total package power dissipation derating
P / C 2.4 mW / C
T
(Ta 25C)
Isolation voltage (Note 3) BV 5000
S V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 100 s pulse, 100 Hz frequency
Note 3: AC, 60 s., R.H. 60%. Apply voltage to LED pin and detector pin together.
2 2017-04-28
Detector LED