X-On Electronics has gained recognition as a prominent supplier of TPN2R304PL,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPN2R304PL,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPN2R304PL,L1Q Toshiba

TPN2R304PL,L1Q electronic component of Toshiba
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Part No.TPN2R304PL,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET 40 Volt N-Channel
Datasheet: TPN2R304PL,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6476 ea
Line Total: USD 0.65 
Availability - 67
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
67
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6476
10 : USD 0.6321
30 : USD 0.6244
100 : USD 0.6148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Hts Code
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We are delighted to provide the TPN2R304PL,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPN2R304PL,L1Q and other electronic components in the MOSFETs category and beyond.

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TPN2R304PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN2R304PLTPN2R304PLTPN2R304PLTPN2R304PL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 10.8 nC (typ.) SW (3) Small output charge: Q = 27 nC (typ.) oss (4) Low drain-source on-resistance: R = 1.8 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 40 V) DSS DS (6) Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.3 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 2015-08 2015-2019 2019-10-18 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPN2R304PL 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1), (Note 2) I 80 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 100 A D Drain current (pulsed) (t = 100 s) (Note 1) I 200 A DP Power dissipation (T = 25 ) P 104 W c D Power dissipation (Note 3) P 2.67 W D Power dissipation (Note 4) P 0.63 W D Single-pulse avalanche energy (Note 5) E 39 mJ AS Single-pulse avalanche current (Note 5) I 80 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.43 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) (Note 3) R 56 a th(ch-a) Channel-to-ambient thermal resistance (T = 25 ) (Note 4) R 235 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by package limit. Silicon chip capability is 100 A. (T = 25 ) c Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 32 V, T = 25 (initial), L = 4.7 H, I = 80 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015-2019 2019-10-18 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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