X-On Electronics has gained recognition as a prominent supplier of TPN7R506NH,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPN7R506NH,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPN7R506NH,L1Q Toshiba

TPN7R506NH,L1Q electronic component of Toshiba
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Part No.TPN7R506NH,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 60 V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet: TPN7R506NH,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.5152 ea
Line Total: USD 2576 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.8099
10000 : USD 0.8069
15000 : USD 0.8039
20000 : USD 0.8008
25000 : USD 0.7977
30000 : USD 0.7946
40000 : USD 0.7913
50000 : USD 0.7882
100000 : USD 0.7848

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.5152
10000 : USD 0.476
25000 : USD 0.4611

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.275
10 : USD 1.0968
100 : USD 0.8552
500 : USD 0.7065
1000 : USD 0.5577
2000 : USD 0.5206

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.275
10 : USD 1.0968
100 : USD 0.8552
500 : USD 0.7065
1000 : USD 0.5577
2000 : USD 0.5206

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.619
10 : USD 0.999
100 : USD 0.7322
500 : USD 0.6059
1000 : USD 0.446
5000 : USD 0.4341

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
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Rise Time
Typical Turn-Off Delay Time
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the TPN7R506NH,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPN7R506NH,L1Q and other electronic components in the MOSFETs category and beyond.

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TPN7R506NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R506NHTPN7R506NHTPN7R506NHTPN7R506NH 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 9.2 nC (typ.) SW (3) Low drain-source on-resistance: R = 6.0 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (5) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 2013-01 2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPN7R506NH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 53 A D Drain current (DC) (T = 25) (Note 1) I 26 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 135 DP Power dissipation (T = 25) P 42 W c D Power dissipation (t = 10 s) (Note 3) P 1.9 W D Power dissipation (t = 10 s) (Note 4) P 0.7 W D Single-pulse avalanche energy (Note 5) E 105 mJ AS Avalanche current I 26 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 2.97 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 65.7 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 178 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 48 V, T = 25 (initial), L = 0.12 mH, I = 26 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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