X-On Electronics has gained recognition as a prominent supplier of TPW1R005PL,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPW1R005PL,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPW1R005PL,L1Q Toshiba

TPW1R005PL,L1Q electronic component of Toshiba
TPW1R005PL,L1Q Toshiba
TPW1R005PL,L1Q MOSFETs
TPW1R005PL,L1Q  Semiconductors

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See Product Specifications
Part No. TPW1R005PL,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET POWER MOSFET TRANSISTOR PD=170W
Datasheet: TPW1R005PL,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.0063 ea
Line Total: USD 7.01 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 5000
Multiples : 5000
5000 : USD 1.6175

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 55
Multiples : 1
55 : USD 2.3452
100 : USD 1.9474
250 : USD 1.8675
500 : USD 1.7975
1000 : USD 1.7275

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 2.284
10 : USD 2.2382
25 : USD 1.9755
100 : USD 1.7983
250 : USD 1.6212
500 : USD 1.5888
1000 : USD 1.5888
3000 : USD 1.5888

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 5000
Multiples : 5000
5000 : USD 1.5616

0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 7.0063
10 : USD 2.5306
25 : USD 2.4156
100 : USD 2.081
500 : USD 1.7568
1000 : USD 1.4326

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 55
Multiples : 1
55 : USD 2.3556

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 5
Multiples : 1
5 : USD 2.377
10 : USD 1.9637
100 : USD 1.9244

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 52
Multiples : 1
52 : USD 2.024

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 52
Multiples : 52
52 : USD 2.0203

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the TPW1R005PL,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPW1R005PL,L1Q and other electronic components in the MOSFETs category and beyond.

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TPW1R005PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPW1R005PLTPW1R005PLTPW1R005PLTPW1R005PL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 34 nC (typ.) SW (3) Small output charge: Q = 98 nC (typ.) oss (4) Low drain-source on-resistance: R = 0.75 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 45 V) DSS DS (6) Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain DSOP Advance Start of commercial production 2016-07 2016-2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TPW1R005PL 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 45 V DSS Gate-source voltage V 20 GSS Drain current (DC) ( T = 25 ) (Note 1) I 150 A c D ( Bottom drain ) Drain current (DC) ( Silicon limit ) (Note 1), (Note 2) I 300 D Drain current (pulsed) ( t = 100 s ) (Note 1) I 500 DP Power dissipation ( T = 25 ) P 170 W c D ( Bottom drain ) Power dissipation (Note 3) P 3 D Power dissipation (Note 4) P 0.96 D Single-pulse avalanche energy (Note 5) E 299 mJ AS Single-pulse avalanche current (Note 5) I 120 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Bottom drain R 0.88 /W th(ch-c) ( T = 25 ) c Channel-to-case thermal resistance Top source R 0.93 th(ch-c) ( T = 25 ) c Channel-to-ambient thermal resistance ( T = 25 ) (Note 3) R 50 a th(ch-a) Channel-to-ambient thermal resistance ( T = 25 ) (Note 4) R 156 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited 150 A by package capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 36 V, T = 25 (initial), L = 16 H, I = 120 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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