TRS12E65C SiC Schottky Barrier Diode TRS12E65CTRS12E65CTRS12E65CTRS12E65C 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Forward DC current: I = 12 A F(DC) (2) Repetitive peak reverse voltage: V = 650 V RRM 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode TO-220-2L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage V 650 V RRM Forward DC current I 12 A F(DC) Forward pulse current I (Note 1) 110 FP I2t limit value I2t (Note 2) 18.0 A2s Junction temperature T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 100 s Note 2: f = 50 Hz Start of commercial production 2013-03 2014-03-17 1 Rev.5.0TRS12E65C 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Test Condition Max Unit Thermal resistance (junction-to-case) R 1.9 /W th(j-c) Thermal resistance (junction-to-ambient) R 89 th(j-a) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 6 A (pulse measurement) 1.27 V FM(1) F V I = 12 A (pulse measurement) 1.54 1.70 FM(2) F Repetitive peak reverse current I V = 300 V (pulse measurement) 0.008 A RRM(1) RRM I V = 650 V (pulse measurement) 0.43 90 RRM(2) RRM Junction capacitance C V = 650 V, f = 1 MHz 65 pF j R 7. 7. 7. 7. MarkingMarkingMarkingMarking Fig. Fig. 7.17.1 MarkingMarking Fig. Fig. 7.17.1 MarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Abbreviation Code Part Number S12E65C TRS12E65C 8. 8. 8. 8. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. V : V has a temperature coefficient of 0.1 %/ . RRM RRM Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum F(DC) rating of I and that the worst-case junction temperature, T , be kept below 140 . F(DC) j I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum FP rating of I and that the worst-case junction temperature, T , be kept below 140 . FP j I2t: This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 140 . j (2) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website. 2014-03-17 2 Rev.5.0