X-On Electronics has gained recognition as a prominent supplier of TSD30H200CW Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. TSD30H200CW Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

TSD30H200CW Taiwan Semiconductor

TSD30H200CW electronic component of Taiwan Semiconductor
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Part No.TSD30H200CW
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Diode, Low VF Trench Schottky, 30A, 200V
Datasheet: TSD30H200CW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1600: USD 0.7337 ea
Line Total: USD 1173.92 
Availability - 0
MOQ: 1600  Multiples: 1600
Pack Size: 1600
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1600
Multiples : 1600
1600 : USD 0.7337
2400 : USD 0.7015
4800 : USD 0.7015
9600 : USD 0.6889
24800 : USD 0.6785

   
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We are delighted to provide the TSD30H200CW from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSD30H200CW and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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TSD30H100CW TSD30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 2 x 15 A F Low forward voltage V 100 - 200 V RRM Low power loss/ high efficiency High forward surge capability I 200 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 2 Package TO-263AB (D PAK) Configuration Dual dies APPLICATIONS Trench Schottky barrier rectifier is designed for high frequency switched mode power supplies such as adapters, lighting, and DC/DC converters. MECHANICAL DATA 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.60g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TSD30H TSD30H TSD30H TSD30H PARAMETER SYMBOL UNIT 100CW 120CW 150CW 200CW TSD30H TSD30H TSD30H TSD30H Marking code on the device 100CW 120CW 150CW 200CW Repetitive peak reverse voltage V 100 120 150 200 V RRM Reverse voltage, total rms value V 70 84 105 140 V R(RMS) per device 30 A Forward current I F per diode 15 A Peak forward surge current, 8.3ms single I 200 A FSM half sine-wave superimposed on rated load Critical rate of rise of off-state voltage dV/dt 10,000 V/s Junction temperature - 55 to +150 C T J Storage temperature T - 55 to +150 C STG 1 Version: D2009 TSD30H100CW TSD30H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 2.8 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 15A, T = 25C 0.69 0.78 V F J TSD30H100CW I = 15A, T = 125C 0.61 0.68 V F J I = 15A, T = 25C 0.75 0.84 V F J TSD30H120CW I = 15A, T = 125C 0.64 0.73 V F J Forward voltage per V (1) F diode I = 15A, T = 25C 0.81 0.90 V F J TSD30H150CW I = 15A, T = 125C 0.68 0.77 V F J I = 15A, T = 25C 0.84 0.92 V F J TSD30H200CW I = 15A, T = 125C 0.70 0.79 V F J T = 25C - 250 A J TSD30H100CW TSD30H120CW T = 125C 10 35 mA J Reverse current I (2) R rated V per diode R T = 25C - 150 A J TSD30H150CW TSD30H200CW T = 125C 3 20 mA J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING 2 TSD30HxCW C0G TO-263AB (D PAK) 50 / Tube 2 TSD30HxCW MNG TO-263AB (D PAK) 800 / 13 reel Notes: 1. defines voltage from 100V(TSD30H100CW) to 200V(TSD30H200CW) 2 Version: D2009

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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