TRS20N65D SiC Schottky Barrier Diode TRS20N65DTRS20N65DTRS20N65DTRS20N65D 1. 1. 1. 1. Applications Applications Applications Applications Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Forward DC current(Per Leg/Both Legs) I = 10/20 A F(DC) (2) Repetitive peak reverse voltage V = 650 V RRM 3. 3. 3. 3. Packaging and Internal Circuit Pin AssignmentPackaging and Internal Circuit Pin AssignmentPackaging and Internal Circuit Pin AssignmentPackaging and Internal Circuit Pin Assignment 1: Anode 2: Cathode 3: Anode TO-247 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage V 650 V RRM Forward DC current Per Leg I 10 A F(DC) Forward DC current Both Legs 20 Forward pulse current Per Leg I (Note 1) 100 FP Forward pulse current Both Legs 200 I2t limit value Per Leg I2t (Note 2) 12.5 A2s I2t limit value Both Legs 50.0 Junction temperature T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 100 s Note 2: f = 50 Hz Start of commercial production 2014-02 2014-04-25 1 Rev.4.0TRS20N65D 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Test Condition Max Unit Thermal resistance (junction-to-case) R Per Leg 1.8 /W th(j-c) Both Legs 0.9 Thermal resistance (junction-to-ambient) R 50 th(j-a) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V (1) I = 5 A Per Leg (pulse measurement) 1.24 V FM F V (2) I = 10 A Per Leg (pulse measurement) 1.5 1.7 FM F V (3) I = 20 A Both Legs (pulse measurement) 1.5 1.7 FM F Repetitive peak reverse current I V = 650 V Per Leg (pulse measurement) 0.42 90 A RRM RRM Junction capacitance C V = 650 V, f = 1 MHz Per Leg 55 pF j R 7. 7. 7. 7. MarkingMarkingMarkingMarking Fig. Fig. 7.17.1 MarkingMarking Fig. Fig. 7.17.1 MarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Abbreviation Code Part Number S20N65D TRS20N65D 8. 8. 8. 8. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. V : V has a temperature coefficient of 0.1 %/ . RRM RRM Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum F(DC) rating of I and that the worst-case junction temperature, T , be kept below 140 . F(DC) j I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum FP rating of I and that the worst-case junction temperature, T , be kept below 140 . FP j I2t: This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 140 . j (2) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website. 2014-04-25 2 Rev.4.0