2N7000CSM TT ELECTRONICS

2N7000CSM MECHANICAL DATA Dimensions in mm (inches) NCHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 FEATURES V = 60V 21 (BR)DSS RDS = 5 1.91 0.10 (ON) (0.075 0.004) A 0.31 rad. (0.012) I = 200mA 3.05 0.13 D (0.12 0.005) 1.40 (0.055) 1.02 0.10 Hermetic Ceramic Surface Mount max. A = (0.04 0.004) package Screening Options Available SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 Gate PAD 3 Drain PAD 2 Source ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) CASE V Drain Source Voltage 60V DS V Gate Source Voltage 40V GS I Drain Current T = 25C 200mA D CASE I Pulsed Drain Current * 500mA DM P Power Dissipation T = 25C 300mW D CASE T Operating Junction Temperature Range 55 to 150C j T Storage Temperature Range 55 to 150C stg * Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 7022 E-mail: sales semelab.co.uk Website: 2N7000CSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) CASE Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS V Drain Source Breakdown Voltage V = 0V I = 10A 60 70 (BR)DSS GS D V V Gate Threshold Voltage V = V I = 0.25mA 0.8 3.0 GS(th) DS GS D I Gate Body Leakage Current V = 20V V = 0V -10 nA GSS GS DS V = 60V V = 0V 1.0 A DS GS I Zero Gate Voltage Drain Current DSS T = 125C 1.0 mA CASE I OnState Drain Current V 2V V = 4.5V 75 mA D(on)* DS DS(ON) GS V = 10V 5 GS R Drain Source On Resistance DS(on)* I = 0.5A T = 125C 9 D CASE V = 4.5V I = 75mA 0.4 GS D V Drain Source On Voltage V DS(on)* V = 10V I = 0.5A 2.5 GS D g Forward Transconductance V = 10V I = 0.5A 100 ms FS* GS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25V 60 iss DS C Output Capacitance V = 0V 25 pF oss GS C Reverse Transfer Capacitance f = 1MHz 5 rss SWITCHING CHARACTERISTICS t TurnOn Time V = 30V V = 10V 10 ON DD GEN R = 150 R = 25 ns L G t TurnOff Time I = 0.2A 10 OFF D * Pulse Test: PW = 80 s , 1% Parameter Min. Typ. Max. Unit R Thermal Resistance, Junction to Ambient 416 C/W JA Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 7022 E-mail: sales semelab.co.uk Website: