Product Information

OP224

OP224 electronic component of TT Electronics

Datasheet
Infrared Emitters Hermetic 890nm

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.036 ea
Line Total: USD 3.04

3838 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
873 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 400
Multiples : 400

Stock Image

OP224
TT Electronics

400 : USD 3.325
800 : USD 3.1625
1600 : USD 3
3200 : USD 2.85

3745 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

OP224
TT Electronics

1 : USD 3.036
100 : USD 2.8635
250 : USD 2.668
400 : USD 2.668
1200 : USD 2.645
2000 : USD 2.553

776 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 400
Multiples : 400

Stock Image

OP224
TT Electronics

400 : USD 4.4954

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Maximum Forward Current
Factory Pack Quantity :
Height
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Vr - Reverse Voltage
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Hermetic Infrared Emitting Diode OP123, OP124, OP223, OP224 Features: Hermetically sealed package Mechanically and spectrally matched to other OPTEK devices Designed for direct mount to PCBoard Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emi ng diode (GaAs), mounted in a miniature herme cally sealed pill package with an enhanced temperature range and a high power output. These devices are designed for direct moun ng to PCBoards. Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared emi ng diode (GaAIAs), mounted in a herme cally sealed pill package with an enhanced temperature range and a narrow irradiance pa ern that provides high on-axis intensity for excellent coupling e ciency. These devices oer signicantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicons peak response. Their small package size permits high device density moun ng. All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices. Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data, and to Applica on Bulle n 202 for pill-type soldering to PCBoard. Ordering Informa on Part LED Peak Total Beam Applications: Number Wavelength Angle OP123 Non-contact reective object sensor 935 mm OP124 Assembly line automation 24 OP223 Machine automation 890 mm OP224 Machine safety End of travel sensor Door sensor 1 2 Pin LED Sensor 1 Anode Collector 2 Cathode Emitter MILLIMETERS DIMENSIONS ARE IN: INCHES RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specication without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 1 TT electronics plc Hermetic Infrared Emitting Diode OP123, OP124, OP223, OP224 Electrical Specications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage Temperature Range -65 C to +150 C o o Operating Temperature Range -65 C to +125 C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Peak Forward Current (2s pulse with 0.1% duty cycle) 1.0 A (1)(2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (3) Power Dissipation 150 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode Apertured Radiant Incidence OP123 0.40 - - (3) 2 (4) E OP124 1.00 - - mW/cm I = 50 mA E (APT) F OP223 1.00 - - OP224 3.50 - - Forward Voltage V OP123 - - 1.50 F V I = 50 mA F OP124 - - 1.80 I Reverse Current - - 100 A V = 2.0 V R R Wavelength at Peak Emission OP123, OP124 - 935 - I = 50 mA F P nm OP223, OP224 - 890 - I = 10 mA F Spectral Bandwidth between Half Power Points B OP123, OP124 - 50 - I = 50 mA F nm OP223, OP224 - 80 - I = 10 mA F Spectral Shift with Temperature /T OP123, OP124 - +0.30 - P nm/C I = Constant F OP223, OP224 - +0.18 - Emission Angle at Half Power Points - 24 - Degree I = 50 mA F HP Output Rise Time I =100 mA, PW=10 s, and F(PK) t OP123, OP124 - 1000 - r ns D.C.=10.0% OP223, OP224 - 500 - Output Fall Time I =100 mA, PW=10 s, and F(PK) t OP123, OP124 - 500 - f ns D.C.=10.0% OP223, OP224 - 250 - Notes: 1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices. 2. No clean or low solids. RMA ux is recommended. Duration can be extended to 10 seconds maximum when ow soldering. 3. Derate linearly 1.50 mW/ C above 25 C. 4. For OP123, OP124, OP223 and OP224, E is a measurement using a 0.031 (0.787 mm) diameter apertured sensor placed 0.50 (12.7 mm) E(APT) from the measuring surface. E is not necessarily uniform within the measured area. E(APT) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specication without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 2 TT electronics plc

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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