Plastic Point Source Infrared Emitting Diode OP245PS Features: x Point source irradiance pattern x Side-looking package for space-limited applications x Wavelength matched to silicons peak response x Higher power output than GaAs at equivalent drive currents x Fast switching speed Description: Each OP245PS device is an infrared emitting diode with a 850 nm GaAIAs chip, molded in a clear IR-transmissive side-looking epoxy package. This package makes these devices ideal for PCBoard mounted slotted switches and for mounted interrupt detectors. The stable forward V vs T characteristic make them suitable for applications that have limited voltage, such as F A battery operation whereas, the low T /T makes them ideal for high-speed operations. R F Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: Ordering Information x Space-limited applications x Mounted interrupt detector Part LED Peak Lens Total Beam Lead Number Wavelength Type Angle Length (min.) x PCBoard mounted slotted x High-speed applications switch OP245PS 850 nm Flat 18 0.5 / 12.7 mm 1 2 Pin LED 1 Anode 2 Cathode NOTES 1 ANODE 2 CATHODE MILLIMETERS DIMENSIONS ARE IN: 1. OUTSIDE DISCRETE SHELL IS POLYSULFONE P1700-11 CLEAR. INCHES 2. THIS LED IS BUILT WITH A 0.011 X 0.011 GaAIAs CHIP. 3. MAX ALLOWABLE EPOXY MENSCUS IS 0.010. CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK S molded plastics. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A 07/06 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Plastic Point Source Infrared Emitting Diode OP245PS Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage and Operating Temperature Range -40 C to +100 C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current 1.0 A (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (2) Power Dissipation 100 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBO PARAMETER MIN TYP MAX UNITS TEST CONDITIONS L Input Diode 2 (,3) mW/cm E Apertured Radiant Incidence 0.12 - 0.8 I = 20 mA E (APT) F V Forward Voltage 1.2 - 1.7 V I = 20 mA F F I Reverse Current - 10 - A V = 2 V R R Wavelength at Peak Emission - 850 - nm I = 20 mA P F Spectral Bandwidth between Half Power B - 50 - nm I = 20 mA F Points Emission Angle at Half Power Points - 18 - Degree I = 20 mA HP F t Output Rise Time - 10 - ns r I = 20 mA, PW = 10 s, D.C. = 10% F(PK) t Output Fall Time - 10 - ns f Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/ C above 25 C. 3. E is a measurement of the average apertured radiant energy incident upon a sensing area 0.180 (4.57 mm) in diameter E(APT) perpendicular to and centered on the mechanical axis of the lens and 0.653 (16.6 mm) from the lens tip. E is not necessarily E(APT) uniform within the measured area. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A 07/06 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com