Plastic Infrared Emitting Diode OP265WPS Features: T-1 (3 mm) package style Broad irradiance pa ern Point source with at lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: The OP265WPS point source model is a at-lensed 850 nm diode with a broad radia on pa ern that provides rela vely even illumina on over a large area. Its stable forward voltage (V ) vs. temperature characteris c makes this device F appropriate for applica ons where voltage is limited (such as ba ery opera on), while the low rise me/fall me (t /t ) r f makes it ideal for high-speed opera on. OP265 devices conform to the OP505 and OP535 series devices. Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data. Applications: Ordering Informa on Space-limited applica ons 2 Part LED Peak Output Power (mW/cm ) I (mA) Total Beam Lead F Applica ons requiring coupling e ciency Number Wavelength Min / Max Typ / Max Angle Length Precision op cal designs OP265WPS 850 nm .055 / .55 20 / 50 120 0.50 Ba ery-operated or voltage-limited applica ons MILLIMETERS DIMENSIONS ARE IN: INCHES 1 2 Pin LED 1 Cathode 2 Anode CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK S molded plas cs. RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specication without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 1 TT electronics plc Plastic Infrared Emitting Diode OP265WPS Electrical Specications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage and Opera ng Temperature Range -40 C to +100 C Reverse Voltage 2.0 V Con nuous Forward Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3.0 A (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (2) Power Dissipa on 100 mW Notes: 1. RMA ux is recommended. Dura on can be extended to 10 second maximum when ow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly at 1.33 mW/ C above 25 C. 3. E is a measurement of the average apertured radiant incidence upon a sensing area 0.081 (2.06 mm) in diameter, perpendicular to and E(APT) centered on the mechanical axis of the lens and 0.590 (14.99 mm) from the measurement surface. E is not necessarily uniform within the E(APT) measured area. Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode 2 (3) E Apertured Radiant Incidence 2.70 - - mW/cm I = 20 mA E (APT) F V Forward Voltage - - 1.80 V I = 20 mA F F I A V = 2 V Reverse Current - - 20 R R Wavelength at Peak Emission - 850 - nm I = 10 mA P F Spectral Bandwidth between Half Power B nm I = 20 mA - - - F Points General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specication without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 2 TT electronics plc