Plastic Infrared Emitting Diode OP266AA SERIES Features: T-1 (3 mm) package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs) that is molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow source irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these devices ideal for space-limited applications. These devices are mechanically and spectrally matched to other OPTEK products as follows: The OP266AA family conform to the OP506 and OP535 series devices. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: Ordering Information Space-limited applications Part LED Peak Output Power (mW/ I (mA) Total Beam Lead F Applications requiring coupling efficiency 2 Number Wavelength cm ) Min / Max Typ / Max Angle Length Battery-operated or voltage-limited applications OP266AA 5.5 / NA OP266AB 7.5 / 12.5 MIN 850 nm 20 / 50 18 0.100 OP266AC 11.5 / 16.5 OP266AD 15.5 / NA NOTES: 1 1. Outside discrete shell is polysulfone CLEAR. 2. This LED is built with a GaAlAs chip. 3. Max allowable epoxy miniscus is 0.030. 4. For identification purposes, Cathode lead is .065 .035 longer than the anode lead. 5. Dimensions are in inches 2 Pin LED 1 Cathode 2 Anode CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK S molded plastics. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue B 12/2013 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Plastic Infrared Emitting Diode OP266AA SERIES Absolute Maximum Ratings (T =25C unless otherwise noted) A o o Storage and Operating Temperature Range -40 C to +100 C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3.0 A (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (2) Power Dissipation 100 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly at 1.33 mW/ C above 25 C. 3. E is a measurement of the average apertured radiant incidence upon a sensing area 0.081 (2.06 mm) in diameter, perpendicular E(APT) to and centered on the mechanical axis of the lens and 0.590 (14.99 mm) from the measurement surface. E is not necessarily E(APT) uniform within the measured area. Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode Apertured Radiant Incidence I = 20 mA F OP266AA 5.50 - - Aperture = 0.081 diameter 2 E OP266AB 7.50 - 12.5 mW/cm E (APT) Distance = 0.590 from seating OP266AC 11.50 - 16.5 surface to aperture surface OP266AD 15.50 - - V Forward Voltage - - 1.80 V I = 20 mA F F I Reverse Current - 10 - A V = 10 V R R Wavelength at Peak Emission - 850 - nm I = 10 mA P F / T Spectral Shift with Temperature - 0.18 - nm/C I = Constant P F Emission Angle at Half Power Points - 18 - Degree I = 20 mA HP F I =100 mA, PW=10 s, D.C.=10.0% t Output Rise Time - 10 - ns r F(PK) t Output Fall Time - 10 - ns f OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue B 12/2013 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com