OP272 TT Electronics

Infrared Light Emitting Diode in SMD Plastic Package OP270 Series 890nm Wavelength Narrow Beam Angle High Power 1.9mm Water Clear Plastic Package Four Lead Configurations Description: The OP270 series are GaAlAs infrared LEDs mounted in a clear plastic SMT packages. The devices incorporate an integral molded lens which enables a narrow beam angle and provides an even emission pattern. This series is available with four lead configurations and is compatible with most automated mounting equipment. The OP270 Series LEDs are mechanically and spectrally matched to the OP570 series phototransistors. Applications Non-Contact Position Sensing Optical encoders Datum detection IrDA Machine automation Reflective and Transmissive Sensors Relative Radiant Intensity vs. OP272 Angular Displacement 100% OP271 80% OP273 60% 40% OP270 20% 0% -90 -60 -30 0 30 60 90 Angular Displacement (Degrees) Pb RoHS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 A subsidiary of Phone: (800) 341-4747 FAX: (972) 323 2396 sensors optekinc.com www.optekinc.com TT electronics plc Relative Radiant Intensity SMD Infrared LED OP270 Series o Absolute Maximum Ratings (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MAXIMUM UNITS Continuous Forward Current I 50 mA F Power Dissipation P 130 mW d Reverse Voltage I 2 V R Peak Forward Current (1s pulse width, 300 pps) I 1 A FP Lead Soldering Temperature T 260 C SOL (1.6mm to epoxy for 5 sec.) Operating Temperature Range T -40C to +85C OPR Storage Temperature Range T -40C to +100C STG Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/ C above 25 C. Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS 2 (3) E Apertured Radiant Incidence 1.5 mW/cm I = 20mA e(APT) F V Forward Voltage 1.5 V I = 20mA F F I Reverse Current 100 A V = 2.0V R R Peak Emission Wavelength 890 nm I = 10mA P F Emission Angle at Half Power Points 25 Deg. I = 20mA HP F t , t Rise and Fall Time 500 ns I = 100mA, PW = 10s, 10% D.C. r f F(PEAK) 3. E is a measurement of the apertured radiant incidence upon a sensing area 0.081 (2.06mm) in diameter, perpendicular to and cen- e(APT) tered on the mechanical axis of the lens, and 0.590 (14.99mm) from the measurement surface. E is not necessarily uniform within e(APT) the measured area. Relative Radiant Intensity vs. Forward Voltage vs. Forward Forward Current vs. Temperature Current vs. Temperature 350% 1.5 Normalized at I = 20mA, F Temperatures stepped -40C TA = 20C. Temperatures in 20 C Increments -40C stepped in 20C Increments 300% 1.4 250% 1.3 200% 100C 150% 1.2 100C 100% 1.1 50% 1.0 0 10 20 30 40 50 0 10 20 30 40 50 Forward Current (mA) Forward Current (mA) OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.3 07/08 Phone: (800) 341-4747 FAX: (972) 323 2396 sensors optekinc.com www.optekinc.com Page 2 of 3 Relative Radiant Intensity Forward Voltage (V)