High Reliability Hermetic Infrared Emitting Diode OP235, OP236 (TX, TXV) Features: TO-46 hermetically sealed package with lens Twice the power output of GaAs at same drive current Characterized to define infrared energy along mechanical axis of device Narrow beam angle Processed to MIL-PRF-19500. Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing with 0.50 (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. Devices have lens cans that provide an 18 beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors. TX and TXV devices are processed to OPTEKs military screening program patterned after MIL-PRF-19500. After 100% screening, Group A and B are performed on every lot and a Group C test is performed every six months. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Contact your local representative or OPTEK for more information. Applications: LED Output Power Total 2 Part Peak (mW/cm ) I (mA) Beam Lead F Non-contact reflective object sensor Number Wavelength Min / Max Typ / Max Angle Length Assembly line automation OP235TX 1.5 / NA Machine automation OP235TXV 890 nm 50 / 100 18 0.50 Machine safety OP236TX 3.5 / NA End of travel sensor OP236TXV Door sensor Military and harsh environments 1 2 Pin LED Sensor 1 Anode Collector / Cathode MILLIMETERS 2 Cathode Emitter / Anode DIMENSIONS ARE IN: INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A 03/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 High Reliability Hermetic Infrared Emitting Diode OP235, OP236 (TX, TXV) Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage Temperature Range -65 C to +150 C o o Operating Temperature Range -55 C to +125 C Reverse Voltage 2.0 V Forward DC Current 100 mA (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (2) Power Dissipation 200 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Apertured Radiant Incidence 2 E OP235 (TX, TXV) 1.5 - - mW/cm I = 100 mA E(APT) F OP236 (TX, TXV) 3.5 - - I = 100 mA Forward Voltage 1.1 - 2.0 F V 1.3 - 2.2 V I = 100 mA, T = -55 C F F A 0.9 - 1.8 I = 100 mA, T = 100 C F A I Reverse Current - - 100 A V = 2.0 V R R Wavelength at Peak Emission - 890 - nm I = 100 mA P F Spectral Bandwidth between - 50 - nm I = 100 mA F Half Power Points Emission Angle at Half Power Points - 18 - Degree I = 100 mA HP F Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.00 mW/ C above 25 C. 3. E is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of E(APT) 1.429 (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250 (6.35 mm) in diameter forming a 10 cone. E is not necessarily uniform within the measured area. E(APT) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 03/09 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com