NPN Silicon Phototransistor OP550, OP552, OP555, OP560, OP565, OP750, OP755 Series OP552 Features: Wide receiving angle OP550 OP555 Four of sensitivity ranges OP560 OP565 Side-looking package OP750 OP755 Ideal for space-limited applications OP770 OP775 Ideal for PCBoard mounting Choice of clear, opaque or blue-tinted package Description: OP550, OP552, OP555, OP750, OP755, OP770 and OP775 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatively even reception over a large area. The OP750, OP755, OP770 and OP775 have additional circuitry to enhance the operation of the device for stray light levels. OP560 and OP565 series consists of a NPN silicon photodarlington transistor molded in an epoxy package with a wide receiving angle that provides relatively even reception over a large area. The side-looking package design allows easy PCBoard mounting of slotted optical switches or optical interrupt detectors. The OP550, OP560, OP750 and OP770 devices have an external lens in a clear epoxy package. The OP552 device has an integral lens in an opaque plastic package that is optically transparent to infrared light but opaque to visible wavelengths. This feature allows the device to be used under high ambient light conditions or anywhere external light sources could interfere with the intended sensing application (visible light immunity). The OP555, OP565, OP755 and OP775 devices have an internal lens in a blue-tinted package. The lensing effect of this package allows an acceptance half-angle of 28 when measured from the optical axis to the half-power point. These devices are 100% production tested using infrared light for close correlation with OPTEKs GaAs and GaAIAs emitters. All of these sensors are mechanically and spectrally matched to the OP140, OP142, OP145, OP240 and OP245 series of infrared emitting diodes. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. For custom versions please contact your OPTEK representative. Applications: Applications requiring wide receiving angle OP Applications requiring PCBoard mounting Space-limited applications 55 = Phototransistor A = Highest sensitivity level Optical switches 56 = Photodarlington B = Sensitivity Level with Min. Max. Optical interrupt detectors C = Middle Sensitivity Level 75 = Phototransistor with R BE Optical encoders D = Lowest Sensitivity Level 77 = Phototransistor with C CE Non-contact position sensing Machine automation 0 = Extended Lens - Clear Package 2 = Extended Lens - Blue Tinted Package 5 = Integral Lens - Blue Tinted Package Available Part Numbers OP550A OP552A OP555A OP560A OP565A OP750A OP755A OP770A OP775A OP550B OP552B OP555B OP560B OP565B OP750B OP755B OP770B OP775B OP550C OP552C OP555C OP560C OP565C OP750C OP755C OP770C OP775C OP550D OP552D OP555D OP750D OP755D OP770D OP775D OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A 05/08 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 5 NPN Silicon Phototransistor OP550, OP552, OP555, OP560, OP565, OP750, OP755 Series OP550, OP552, OP560, OP750, OP770 (A, B, C, D) MILLIMETERS DIMENSIONS ARE IN: INCHES OP555, OP565, OP755 , OP775 (A, B, C, D) MILLIMETERS DIMENSIONS ARE IN: INCHES 2 OP555 - CONTAINS POLYSULFONE Pin Sensor To avoid stress cracking, we suggest using 1 Emitter ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural 2 Collector failure in OPTEK S molded plastics. 1 Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied to the leads when soldering. 2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/ C above 25 C. For OP552, derate linearly 1.25 mW/ C above 25 C. 3. For all phototransistors in this series, the light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and OP555 only, a radiometric intensity level that varies less than 10% over the entire lens surface of the phototransistor being tested applies. (0.040 T - 3.4) 4. To calculate typical collector dark current in A, use the formula I =10 , where T is ambient temperature in C. CEO A A OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 05/08 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com