Product Information

OP800A

OP800A electronic component of TT Electronics

Datasheet
Phototransistors Photo Transistor

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6307 ea
Line Total: USD 3.63

1560 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2182 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

OP800A
TT Electronics

1000 : USD 3.7625
2000 : USD 3.575
4000 : USD 3.3875
8000 : USD 3.225

1560 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

OP800A
TT Electronics

1 : USD 3.6307
100 : USD 3.3816
250 : USD 3.2985
500 : USD 3.1917
1000 : USD 3.1086

1940 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

OP800A
TT Electronics

1000 : USD 4.8885

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Type
Wavelength
Brand
Maximum Collector Current
Factory Pack Quantity :
LoadingGif

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Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package oeff r high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters Ro HS Collector-Base Voltage 30 V 30 V Collector-Emitter Voltage Emitter -Base Voltage 5 V 5 V Emitter -Collector Voltage Continuous Collector Current 50 mA o o -65 C to +150 C Storage Temperature Range o o Operating Temperature Range -65 C to +125 C (2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (3) Power Dissipation 250 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/ C above 25 C. 3. Junction temperature maintained at 25 C. 2 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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