X-On Electronics has gained recognition as a prominent supplier of Q65110A3107 Phototransistors across the USA, India, Europe, Australia, and various other global locations. Q65110A3107 Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.
We are delighted to provide the Q65110A3107 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q65110A3107 and other electronic components in the Phototransistors category and beyond.
2007-11-14 Silicon NPN Phototransistor with V Characteristics NPN-Silizium-Fototransistor mit V -Charakteristik Version 1.0 SFH 3710 Features: Besondere Merkmale: Spectral range of sensitivity: 350 ... 950 nm Spektraler Bereich der Fotoempfindlichkeit: 350 ... 950 nm Special: Adapted to human eye sensitivity (V) Besonderheit: Angepasst an die Augenempfindlichkeit (V ) Very small SMT package Sehr kleines SMT Gehuse Applications Anwendungen For control and drive circuits Messen / Steuern / Regeln Ambient light detector Umgebungslichtsensor Exposure meter for daylight and artificial light Beleuchtungssensor Sensor for backlight-dimming Dimmungssensor fr Hintergrundbeleuchtung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 560 nm, E = 10 W/cm , V = 5 V e CE I A PCE SFH 3710 2.5 ... 12.5 Q65110A3107 SFH 3710-2/3 2.5 ... 8 Q65110A3512 SFH 3710-3/4 4 ... 12.5 Q65110A3511 Note: Single bins on request Anm.: Einzelgruppen auf Anfrage 2007-11-14 1Version 1.0 SFH 3710 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 85 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 5.5 V CE Kollektor-Emitter-Spannung Collector current I 20 mA C Kollektorstrom Emitter-collector voltage V 0.5 V EC Emitter-Kollektor-Spannung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 570 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 350 ... 950 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A0.29 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 0.75 x 0.75 mm x Abmessung der Chipflche mm Half angle 60 Halbwinkel Capacitance C 4pF CE Kapazitt (V = 0 V, f = 1 MHz, E = 0) CE Dark current I 3 ( 50) nA CE0 Dunkelstrom (V = 5 V, E = 0) CE Temperature coefficient TC 0.9 % / K Temperaturkoeffizient (Std. Light A) Temperature coefficient TC 0.78 % / K Temperaturkoeffizient ( = 550 nm) 2007-11-14 2
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