Prod uct Bul le tin OP955 June 1996 PIN Sili con Pho to di ode Type OP955 o Fea tures Ab so lute Maxi mum Rat ings (T = 25 C un less oth er wise noted) A Re verse Break down Volt age . 60 V Wide receiving angle o o Stor age and Op er at ing Tem pera ture Range -40 C to +100 C Linear response vs. irradiance Lead Sol der ing Tem pera ture 1/16 inch (1.6 mm) from case for 5 sec. with sol der ing o (1) Fast switching time iron 260 C (2) Side-looking package ideal for space Power Dis si pa tion . 100 mW limited applications Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. De scrip tion o o (2) Derate linearly 1.67 mW/ C above 25 C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a The OP955 devices consists of a PIN radiometric intensity level which varies less than 10% over the entire lens surface of the silicon photodiode molded in a clear photodiode being tested. (0.042 T -1.5) epoxy package which allows spectral (4) To calculate typical dark current in A, use the formula I = 10 A where T is D A o response from visible to infrared ambient temperature in C. wavelengths. The wide receiving angle provides relatively even reception over a Typi cal Per form ance Curves large area. The side-looking package is designed for easy PC board mounting. The lensing effect of the package allows Coupling Characteristics o Relative Response vs. an acceptance half angle of 45 Wavelength OP955 and OP245 measured from the optical axis to the half power point. These devices are 100% production tested using infrared light for close correlation with Opteks GaAs and V = 5 V R I = 20 mA F GaAlAs emitters. Dis tance Be tween Lens Tips - inches - Wave length - nm Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 3-62Type OP955 o Elec tri cal Char ac ter is tics (T = 25 C un less oth er wise noted) A SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS 2(3) I Reverse Light Current 8 18 A V = 5 V, E = 1 mW/cm L R e I Reverse Dark Current 1 60 nA V = 30 V, E = 0 D R e V Reverse Breakdown Voltage 60 V I = 100 A (BR) R V Forward Voltage 1.2 V I = 1 mA F F C Total Capacitance 4 pF V = 20 V, E = 0, f = 1.0 MHz T R e t , t Rise Time, Fall Time 5 ns V = 20 V, = 850 nm, R = 50 r f R L Typi cal Per form ance Curves Normalized Light Current vs Total Capacitance vs Normalized Light and Dark Reverse Voltage Reverse Voltage Current vs Ambient Temperature V = 5 V R = 935 nm Normalized to o o T = 25 C A T = 25 C A 2 E = 0 mW/cm e f = 1 MHz Light Current o T = 25 C A = 935 nm Normalized to V = 5 V R Dark Current o T - Ambient Temperature - C A V - Reverse Voltage - V V - Reverse Voltage - V R R Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement V = 5 V R o T = 25 C A = 935 nm Test Conditions: = 935 nm V = 5 V R Distance Lens to Lens = 1.5 inches 2 E - Irradiance - mW/cm e - Angular Displacement - Deg. Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 3-63