Silicon Photodiode in Top-View PLCC-2 Package OP980 Features: Wide acceptance angle, 100 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-2) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity Level: MSL2 or > Description: The OP980 is a high speed, low-noise and high sensitivity PIN silicon photodiode mounted in a miniature SMD package. The device has a flat window lens, which enables a wide acceptance angle at 100. Due to its clear lens, the OP980 responds to visible and near infrared light. It is packaged in a plastic leadless chip carrier that is compatible with most automated pick and place mounting equipment. The OP980 is mechanically and spectrally matched to the OP280 and OP180 infrared LED. Applications: Machine automation Non-contact position sensing Optical encoders Ordering Information Datum detection Reflective sensors Part Viewing Computer peripherals Sensor Number Angle Counters and sorters Smoke detectors Miniature optical switches OP980 Photodiode 100 Touch Sensors Package Outline Dimensions 1 2 1 2 Recommended Solder Patterns Pin Transistor 1 Anode MILLIMETERS 2 Cathode DIMENSIONS ARE IN: INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A .1 5/10 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 5 Silicon Photodiode in Top-View PLCC-2 Package OP980 Absolute Maximum Ratings (T =25C unless otherwise noted) A o o Storage Temperature Range -40 C to +100 C o o Operating Temperature Range -25 C to +85 C (1) Lead Soldering Temperature 260 C Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 2(3) I Light Current 0.5 - - A V = 5.0 V, E = 1.0 mW/cm L R E 2(3) I Dark Current - - 60 nA V = 30.0 V, E = 0.0 mW/cm D R E VR Reverse Breakdown Voltage 60 - - V I = 10 A (BR) R 2 V Forward Voltage - - 1.2 V I = 1 mA, Ee = 0.0 mW/cm F F Peak Sensitivity Wavelength - 890 - nm V = 5.0 pk R tr Rise Time - 50 - ns V = 5.0, R = 1k R L tf Fall Time - 50 - ns V = 5.0, R = 1k R L Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/ C above 25 C. 3. E is an unfiltered GaAlAs LED with peak emission wavelength of 890nm. The measurement of the apertured radiant incidence e(APT) upon a sensing area 0.081 (2.06mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 0.590 (14.99mm) from the measurement surface. Measurement surface will be considered the tip of the top-view lens. E is not e(APT) necessarily uniform within the measured area. Electrical Characteristic Performance Curves Spectral Responsivity vs. Typical Light CurrentI vs. L Wavelength Irradiance Ee 1.0 10 0.9 9 0.8 8 0.7 7 0.6 6 0.5 5 0.4 4 0.3 3 0.2 2 0.1 1 0.0 0 400 500 600 700 800 900 1000 1100 01 23 45 6 7 89 10 2 Wavelength(nm) IrradianceEe(mW/cm ) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.1 5/10 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 5 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Relative Radiant Sensitivity(A/W)-% Light CurrentI -(A) L