Slotted Optical Switch OPB660N, OPB660T Features: Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio Gap 0.125 (3.18mm) wide and 0.345 (8.76mm) deep slot Emitter Aperture 0.05 X 0.06 (1.27mm X 1.52mm), Sensor Aperture 0.01 X 0.06 (0.25mm X 1.52mm) Description: Each OPB660 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor, combined with an enhanced low current roll-o tff hat improves contrast ratio and provides immunity to background irradiance. Housings are made from an opaque grade of injection -molded plastic to minimize sensitivity to both visible and near -infrared light. Applications: Non-contact transmissive object sensor Assembly line automation Machine automation Machine safety Part LED Peak Slot Width / Aperture Lead Length / Number Wavelength Sensor Depth Emitter/Sensor Spacing End of travel sensor Door sensor OPB660N Rbe 0.100 / 0.320 890 nm 0.125 / 0.345 0.05 / 0.01 (MIN) Transistor OPB660T 2 3 1 4 Pin LED Pin Transistor 1 A node 3 Coll ec t or 2 Cat hode 4 Em it t er MILLIMETERS DIMENSIONS ARE IN: INCHES General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB660N, OPB660T Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +100 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A Reverse DC Voltage 3 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 24 V Collector DC Current 30 mA (3) Power Dissipation 200 mW Electrical Characteriscti s (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode V Forward Voltage - - 1.6 V I = 10 mA F F I Reverse Current - - 100 A V = 3 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 24 - - V I = 100 A (BR)CEO CE BV Emitter Reverse Breakdown Voltage 0.4 - - V I = 100 A ECO EC I Collector-Emitter Dark Current - - 100 A V = 5 V CEO CE Combined V Collector-Emitter Saturation Voltage - - 0.4 V I = 10 mA, I = 100 A, (gap unblocked) SAT F C I On-State Collector Current 600 - - A I = 10 mA, V = 5 V C(ON) F CE Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. A maximum of 20 grams force ma y be ap- plied to leads when soldering. (2) Derate linearly 1.33 mW/ C above 25 C. (3) Derate linearly 2.0 mW/ C above 25 C. General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 2 TT electronics plc