OPB806 TT Electronics

Slotted Optical Switch OPB806 Features: Non-contact switching Base or side mounting 0.125 (3.175 mm) slot width Description: The OPB806 slotted optical switch consists of an infrared emitting diode (LED) and a NPN silicon phototransistor, mounted on opposite sides of a 0.125 (3.175 mm) wide slot. The OPB806 has two sets of mounting tabs allowing Base or Side mounting of the device. The LED and phototransistor leads project from each side of the housing on 0.050 (1.27 mm) centers. Phototransistor switching takes place whenever an opaque object passes through the slot. Applications: Non-contact interruptive object sensing RoHS Assembly line automation Machine automation LED Peak Slot Width / Lead Equipment security Part Number Wavelength Sensor Depth Aperture Length Machine safety OPB806 935 nm Transistor 0.125 / 0.375 None 0.500 1 3 4 2 Pin Description 1 Anode 2 Cathode 3 Collector 4 Emitter MILLIMETERS DIMENSIONS ARE IN: INCHES General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB806 Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Continuous Forward Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V (2) Power Dissipation 100 mW Electrical Characteriscti s (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP165 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (See OP505 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 A (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E I Collector-Emitter Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Combined V Collector-Emitter Saturation Voltage - - 0.5 V I = 200 A, I = 20 mA CE(SAT) C F I On-State Collector Current 0.4 - - mA V = 0.5 V, I = 20 mA C(ON) CE F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. (2) Derate linearly 1.67 mW/C above 25 C.. (3) Methanol or isopropanol are recommended as cleaning agents. Plascti housing is soluble in chlorinated hydrocarbons and keton es. (4) All parameters were tested using pulse technique. General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 2 TT electronics plc