OPB815WZ TT Electronics

Deep Gap Slotted Switch with Wire and Connector Options OPB815L, OPB815WZ Series L Package Features: Wide slot width: 0.375 (9.5 mm) Deep slot depth: 0.430 (10.9 mm) Product Photo Here Selectable wire lengths from 24 (610 mm) WZ Package Seven popular connector options Description: The OPB815 consists of an infrared Light Emitting Diode (LED) and an NPN silicon phototransistor mounted in a low-cost plastic housing. The device is designed to switch electrical states when an opaque object is passed through the slot. The slot is wider and deeper than many slotted switches and will accommodate a variety of different materials. This device can be ordered with PCBoard solderable leads (OPB815L) or with 26 AWG stranded, UL rated wire length of 24 610 mm (OPB815WZ). Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: Ordering Information Non-contact object sensing Aperture Lead Part LED Peak Slot Emitter /Sensor Length / Assembly line automation OPB815L 890 nm Transistor 0.375 / 0.430 None 0.10 / 0.53 Machine automation OPB815WZ 890 nm Transistor 0.375 / 0.430 None 24 / 26 AWG Equipment security Machine safety OPB815WZ OPB815L MILLIMETERS DIMENSIONS ARE IN: Color Description INCHES Pin Description Red Anode 1 Anode Black Cathode 2 Cathode White Collector 3 Collector Green Emitter 4 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.5 01/14 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Deep Gap Slotted Switch with Wire and Connector Options OPB815L, OPB815WZ Series Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +80 C Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Infrared LED Continuous Forward Current 50 mA Reverse Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V (2) Power Dissipation 100 mW Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Infrared LED (see OP240 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (see OP550 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - v I = 100 A (BR)ECO E I Collector-Emitter Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Coupled V Collector-Emitter Saturation Voltage - - 0.4 V I = 500 A, I = 20 mA CE(SAT) C F I On-State Collector Current 3.5 - 16 mA V = 10 V, I = 20 mA C(ON) CE F Notes: (1) All wires are 26 AWG stranded, UL rated. (2) Derate linearly 1.67mW/C above 25 C. (3) Methanol or isopropanol are recommended as cleaning agents. Test Diagram The plastic housing is soluble in chlorinated hydrocarbons and Top to Bottom keytones. 0 (4) All parameters tested using pulse techniques. Emitter Left to Right Right to Left Sensor 0 Width OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.5 01/14 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com