Focused for maximum sensitivity Choice of phototransistor, photodarlington or base-emitter resistor Low cost plastic housing The OPB702 series consists of an infrared Light Emitting Diode (LED) or red Visible Light Emitting Diode (VLED) and the choice of a NPN silicon phototransistor (OPB702), a photodarlington (OPB702D) or a base-emitter resistor for low light suppression (OPB702R, OPB702RR). On each sensor, the LED and the phototransistor, photodarlington or base-emitter resistor are mounted side -by-side on converging optical axes in a black plastic housing. The OPB702 uses type OP505 sensor, the OPB702D uses an OP535 sensor and the OPB702R, OPR702RR uses an OP705 sensor. Custom electrical, wire, cabling and connectors are available. Contact your local representative or OPTEK for more information. Ordering Information Non-contact reflective object sensor Reflection Assembly line automation Part LED Peak Distance Lead Length / Machine automation Number Wavelength Sensor Inch (mm) Spacing Machine safety OPB702 Transistor End of travel sensor Door sensor OPB702D 890 nm Darlington 0.150 0.400 / 0.100 (3.81mm) OPB702R Transistor and Rbe OPB702RR 640 nm Transistor and Rbe MILLIMETERS OPB702D DIMENSIONS ARE IN: INCHES Reflective Surface OPB702 Reflective Surface 1 2 4 3 1 2 4 3 OPB702R Reflective Surface Pin LED Pin LED 1 Anode 3 Emitter 2 Cathode 4 Collector 1 2 4 3 Ro HS Pin LED Pin Transistor 1 Cathode 3 Emitter 2 Anode 4 Collector Storage & Operating Temperature Range -40 C to +85 C (2) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Peak Forward Current 50 mA Reverse Voltage 2 V (1) Power Dissipation 100 mW Output Photosensor Collector-Emitter Voltage OPB702, OPB702R 30 V OPB702D, OPB702RR 15 V Emitter -Collector Voltage 5 V (1) Power Dissipation 100 mW Input Diode (see OP265 or OP165 for Infrared LED & OVLAS6CB8 for Red LED for additional information) Forward Voltage (Infrared LED) - - 1.7 I = 20 mA F V V F Red (VLED) 2.4 I = 40 mA F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (see OP505 for Phototransistor, OP705 for Rbe-Phototransistor, OP535 for Photodarlington) Collector-Emitter Breakdown Voltage OPB702 30 - - I = 100 A, I = 0, E = 0 C F e V (BR)CEO OPB702D 15 - - V I = 1 mA, I = 0, E = 0 C F e OPB702R, OPB702RR 30 - - I = 1 mA, I = 0, E = 0 C F e Emitter -Collector Breakdown Voltage V OPB702 5 - - V I = 100 A, I = 0, E = 0 (BR)ECO E F E OPB702D 5 - - V I = 100 A, I = 0, E = 0 E F E Emitter -Reverse Current I ECO OPB702R, OPB702RR - - 100 A V = 0.4 V, I = 0, E = 0 CE F E Collector Dark Current OPB702 - - 100 nA V = 10 V, I = 0, E = 0 CE F E I CEO OPB702D - - 250 nA V = 10 V, I = 0, E = 0 CE F E OPB702R, OPB702RR - - 100 nA V = 10 V, I = 0, E = 0 CE F E Combined Collector-Emitter Saturation Voltage (3) V OPB702 - - 0.4 V I = 40 mA, I = 250 A, d = .15 (3.81 mm) CE(SAT) F C (4) OPB702D - - 1.1 V I = 40 mA, I = 400 A, d = .15 (3.81 mm) F C OPB702R, OPB702RR - - 0.4 V I = 40 mA, I = 250 A, d = .15 (3.81 mm) F C On-State Collector Current OPB702 0.1 - 1.0 (3)(4) I OPB702D 3.2 - 65.0 C(ON) mA I = 40 mA, V = 5 V, d = .15 (3.81 mm) F CE OPB702R 0.4 - 6.0 OPB702RR 0.2 - 3.5