Product Information

SML020DH12

SML020DH12 electronic component of TT Electronics

Datasheet
Semelab TT Electronics Schottky Diodes & Rectifiers SI CARBIDE 1200V 20A SCHOTTKY RECTIFIER

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 208.3536 ea
Line Total: USD 208.35

6 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

SML020DH12
TT Electronics

1 : USD 172.615
10 : USD 168.2565
30 : USD 168.2565
60 : USD 167.3135
120 : USD 167.302
1020 : USD 167.2905
2520 : USD 167.256

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 1200V, 20A (2x10A) Rectifier Diodes High Temperature Operation Tj = 200C Effective Zero Reverse and Forward Recovery High Frequency Operation High Speed Low Loss Switching ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) c V Repetitive Peak Reverse Breakdown Voltage 1200V RRM V Surge Peak Reverse Voltage 1200V RSM V DC Blocking Voltage 1200V DC I Average Forward Current 20A F(AVG) I Peak Forward Surge Current, T = 125C 50A F(PEAK) c P Power Dissipation (per leg) 116W D T Junction Temperature Range -55 to +200C J T Storage Temperature Range -55 to +225C stg THERMAL PROPERTIES Symbols Parameters Max. Units R Thermal Resistance, Junction To Case 1.5 C/W JC ELECTRICAL CHARACTERISTICS (Per Die, T = 25C unless otherwise stated) c Symbols Parameters Test Conditions Min. Typ. Max. Units I = 10A 1.6 1.8 F (1) V Forward Voltage V F T = 175C 2.5 3.0 c V = V 10 200 R RRM I Reverse Current A R T = 175C 20 1000 c DYNAMIC CHARACTERISTICS (T = 25C unless otherwise stated) C I = 10A V = 1200V (2) Total Capacitative F R Q 61 nC C Charge di/dt = 500A/s T = 25C J NNNNooootttteeeessss (1) Pulse Width 380us, 2% (2) By Design. Not a production test. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8960 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE SML020DH12 NNNNooootttteeeessss (3) SiC Schottky Diode, no minority carrier recombination thus zero reverse recovery. Recovery time shown is due to a small junction capacitance charge and is independent of junction temperature SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8960 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website:

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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