X-On Electronics has gained recognition as a prominent supplier of P6006BD MOSFETs across the USA, India, Europe, Australia, and various other global locations. P6006BD MOSFETs are a product manufactured by U-NIK. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

P6006BD U-NIK

P6006BD electronic component of U-NIK
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Part No.P6006BD
Manufacturer: U-NIK
Category: MOSFETs
Description: MOSFET N Trench 60V 21A (Tc) 2.5V @ 250uA 60 mΩ @ 12A,10V TO-252 RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the P6006BD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6006BD and other electronic components in the MOSFETs category and beyond.

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The P6006BD with MOSFET N Trench is a power transistor manufactured by U-NIK. The transistor has a maximum Vds rating of 60 volts and a maximum Id rating of 21 amps. It has a low threshold voltage rating of 2.5 volts at a gate charge of 250uA and Rds (on) of 60 mO at 12A, 10V. The transistor is packaged in a TO-252 RoHS compliant package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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