X-On Electronics has gained recognition as a prominent supplier of TSG10N06AT MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSG10N06AT MOSFETs are a product manufactured by UNIGROUP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSG10N06AT UNIGROUP

TSG10N06AT electronic component of UNIGROUP
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See Product Specifications
Part No.TSG10N06AT
Manufacturer: UNIGROUP
Category: MOSFETs
Description: MOSFET DFN5×6 RoHS
Datasheet: TSG10N06AT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2605 ea
Line Total: USD 0.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2605
10 : USD 0.2004

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSG10N06AT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSG10N06AT and other electronic components in the MOSFETs category and beyond.

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The TSG10N06AT is a RoHS-compliant MOSFET device manufactured by UNIGROUP. This part is fabricated using a high-performance N-channel silicon MOSFET with a DFN 5×6 package size and is designed for low on-resistance applications. The part has an exceptionally low static drain-to-source resistance of 6 milliohms and low gate charge (total) for high efficiency applications. This device is ideal for low voltage DC-DC converters, switched mode power supplies, and other switching applications operating up to 10A. It has an RDS(ON) of 9.3mOhms and an of 30V. The TSG10N06AT also has a 100% Avalanche rated gate.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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