X-On Electronics has gained recognition as a prominent supplier of 10N80L-TF2-T MOSFETs across the USA, India, Europe, Australia, and various other global locations. 10N80L-TF2-T MOSFETs are a product manufactured by Unisonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

10N80L-TF2-T Unisonic

10N80L-TF2-T electronic component of Unisonic
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See Product Specifications
Part No.10N80L-TF2-T
Manufacturer: Unisonic
Category: MOSFETs
Description: MOSFET N Trench 800V 10A (Tc) 5V @ 250uA 1.1 Ω @ 5A,10V TO-220F (TO-220IS) RoHS
Datasheet: 10N80L-TF2-T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6921 ea
Line Total: USD 0.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6921
10 : USD 0.6791
30 : USD 0.6696
100 : USD 0.6603

   
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Continuous Drain Current Id @ 25°C
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Rds On Max @ Id Vgs
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We are delighted to provide the 10N80L-TF2-T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 10N80L-TF2-T and other electronic components in the MOSFETs category and beyond.

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The 10N80L-TF2-T is a MOSFET manufactured by Unisonic. It is an N-Channel Trench Field Effect Transistor (FET) and is rated for 800 Volts and 10 Amps. It has a temperature coefficient (Tc) of 5 Volts and a base current of 250 microamps. Additionally, it has a total gate-source resistance of 1.1 Ohms and a gate-source breakdown voltage of 10 Volts when tested at 5 Amps of current. It is packaged in an RoHS compliant-compliant, TO-220F (TO-220IS) form factor.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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