JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU20N06 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) T O -252- 2L 20A 45m 10V 60V GENERAL DESCRIPTION The CJU20N06 uses advanced trench technology and design to 1. GATE provide excellent R with low gate charge. It can be used in a DS(ON) 2. DRAIN wide variety of applications. 3. SOURCE FEATURE z High density cell design for ultra low R dson z Fully characterized avalanche voltage and current z Good stability and uniformity with high E AS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply Equivalent Circuit MARKING: CJU20N06= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol alue V Unit Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 20 D A Pulsed Drain Current I 60 DM (1) Single Pulsed Avalanche Energy E 72 mJ AS Power Dissipation P 1.25 W D Thermal Resistance from Junction to Ambient R 100 JA /W Junction Temperature T 150 J Storage Temperature T -55~+150 stg (1).E condition: T =25,V =30V,L=0.5mH, R =25, Starting T = 25C AS j DD G J www.cj-elec.com 1 A,Mar,2016 unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 60 V 1 Zero gate voltage drain current I VDS =60V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1 2 3 V GS 37 Static drain-source on-resistance RDS(on) VGS =10V, ID =20A 45 m Dynamic characteristics (note 2) Input capacitance C 500 iss VDS =30V,VGS =0V, Output capacitance C 60 pF oss f =1MHz Reverse transfer capacitance C 25 rss Switching characteristics (note 2) Total gate charge Q 12 g V =48V, V =10V, DS GS Gate-source charge Q 4.1 nC gs I =15A D Gate-drain charge Q 4.5 gd Turn-on delay time td 5 (on) V =30V,ID=2A, DD Turn-on rise time tr 2.6 V =10V,R =3, ns GS G Turn-off delay time td(off) 16.1 R =6.7 L Turn-off fall time tf 2.3 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =20A 1.2 V SD S Continuous drain-source diode forward I 20 A S current Pulsed drain-source diode forward current I 60 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A,Mar,2016 026)(7 (/(&75,& / &+ 5 &7(5,67,&6